Title | Ultrathin Indium selenide (In2Se3) thin films and field-effect transistors for active matrix addressable Micro-LEDs |
Author | |
Corresponding Author | Wang,Heshen |
DOI | |
Publication Years | 2018
|
ISSN | 0097-966X
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EISSN | 2168-0159
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Source Title | |
Volume | 49
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Issue | S1
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SUSTech Authorship | Corresponding
|
Language | English
|
URL | [Source Record] |
Scopus EID | 2-s2.0-85097333206
|
Data Source | Scopus
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Conference paper |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/411956 |
Department | Southern University of Science and Technology |
Affiliation | 1.Sun Yat-sen University,Guangzhou,China 2.Southern University of Science and Technology,Shenzhen,China 3. |
First Author Affilication | Southern University of Science and Technology |
Corresponding Author Affilication | Southern University of Science and Technology |
Recommended Citation GB/T 7714 |
Wang,Heshen,Liu,Qiye,Feng,Xuemeng,et al. Ultrathin Indium selenide (In2Se3) thin films and field-effect transistors for active matrix addressable Micro-LEDs[C],2018.
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