中文版 | English
Title

Ultrathin Indium selenide (In2Se3) thin films and field-effect transistors for active matrix addressable Micro-LEDs

Author
Corresponding AuthorWang,Heshen
DOI
Publication Years
2018
ISSN
0097-966X
EISSN
2168-0159
Source Title
Volume
49
Issue
S1
SUSTech Authorship
Corresponding
Language
English
URL[Source Record]
Scopus EID
2-s2.0-85097333206
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeConference paper
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/411956
DepartmentSouthern University of Science and Technology
Affiliation
1.Sun Yat-sen University,Guangzhou,China
2.Southern University of Science and Technology,Shenzhen,China
3.
First Author AffilicationSouthern University of Science and Technology
Corresponding Author AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Wang,Heshen,Liu,Qiye,Feng,Xuemeng,et al. Ultrathin Indium selenide (In2Se3) thin films and field-effect transistors for active matrix addressable Micro-LEDs[C],2018.
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