中文版 | English
Title

Molecular dynamics simulation of laser assisted grinding of GaN crystals

Author
Corresponding AuthorHu,Yuxiu; Geng,Yanquan
Publication Years
2023-02-01
DOI
Source Title
ISSN
0020-7403
EISSN
1879-2162
Volume239
Abstract
Gallium nitride crystal is a typical difficult-to-machine material due to its distinct anisotropy, high brittleness, and high hardness. The molecular dynamics simulations of traditional grinding and laser assisted grinding of GaN single crystals with a single grit were performed, and the influences of the laser power density on grinding force, stress distribution, material damage mechanism, subsurface damage depth, and abrasive wear were systematically studied. The results demonstrated that dislocations, stacking faults, hexagonal-to-cubic phase transition, and amorphous transition were generated during both traditional grinding and laser assisted grinding processes. Compared with the traditional grinding, laser assisted grinding with an appropriate laser power density reduced the grinding force, stress distribution, phase transition percentage, dislocation loop length, subsurface damage depth, and wear damage of the abrasive. However, excessive laser power densities caused deeper subsurface damage depth and severer amorphous damage for the rake face of the abrasive particle, which seriously deteriorated the integrity of the ground surface and subsurface. The results not only enhance the understanding of material removal and damages under the coupling actions of the laser and abrasive machining, but also provide a theoretical basis for parameter optimization during the machining of GaN single crystals.
Keywords
URL[Source Record]
Indexed By
Language
English
Important Publications
ESI Hot Papers ; ESI Highly Cited Papers
SUSTech Authorship
Others
Funding Project
China Postdoctoral Science Foundation[2020M670901];China Postdoctoral Science Foundation[2022T150163];National Natural Science Foundation of China[51905254];National Natural Science Foundation of China[52005134];Fundamental Research Funds for the Central Universities[FRFCU5710051122];State Key Laboratory of Robotics and System[SKLRS-2022-ZM-14];
WOS Research Area
Engineering ; Mechanics
WOS Subject
Engineering, Mechanical ; Mechanics
WOS Accession No
WOS:000890640900001
Publisher
ESI Research Field
ENGINEERING
Scopus EID
2-s2.0-85142192640
Data Source
Scopus
Citation statistics
Cited Times [WOS]:51
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/412532
DepartmentDepartment of Mechanical and Energy Engineering
Affiliation
1.State Key Laboratory of Robotics and System (HIT),Harbin Institute of Technology,Harbin,150001,China
2.School of Mechatronics Engineering,Harbin Institute of Technology,Harbin,150001,China
3.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China
Recommended Citation
GB/T 7714
Li,Chen,Hu,Yuxiu,Zhang,Feihu,et al. Molecular dynamics simulation of laser assisted grinding of GaN crystals[J]. INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES,2023,239.
APA
Li,Chen,Hu,Yuxiu,Zhang,Feihu,Geng,Yanquan,&Meng,Binbin.(2023).Molecular dynamics simulation of laser assisted grinding of GaN crystals.INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES,239.
MLA
Li,Chen,et al."Molecular dynamics simulation of laser assisted grinding of GaN crystals".INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES 239(2023).
Files in This Item:
There are no files associated with this item.
Related Services
Fulltext link
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Export to Excel
Export to Csv
Altmetrics Score
Google Scholar
Similar articles in Google Scholar
[Li,Chen]'s Articles
[Hu,Yuxiu]'s Articles
[Zhang,Feihu]'s Articles
Baidu Scholar
Similar articles in Baidu Scholar
[Li,Chen]'s Articles
[Hu,Yuxiu]'s Articles
[Zhang,Feihu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li,Chen]'s Articles
[Hu,Yuxiu]'s Articles
[Zhang,Feihu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.