中文版 | English
Title

Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering

Author
Corresponding AuthorWang,Qing; Yu,Hongyu
Publication Years
2023-02-01
DOI
Source Title
ISSN
1369-8001
Volume154
Abstract
In this study, magnetron reactive sputtering using a copper oxide target was performed to obtain a series of high-quality CuO films with high hole concentration. The results of X-ray photoelectron spectroscopy and Hall measurements revealed that the hole concentration exhibited a negative correlation to the Cu to Cu ratio in the p-type CuO film. This phenomenon indicated that the hole concentration can be modulated by adjusting film deposition conditions. Considering the high hole concentration and fine surface quality, these CuO films were used as p-type gates without gate etching and positively shifted the threshold voltage (V) of AlGaN/GaN high-electron-mobility transistors (HEMTs). This study is the first to achieve quasi-normally off GaN HEMTs using CuO gates, in which V positively shifted approximately 2.5 V and reached 0.5 V. Because of the excellent surface quality of the CuO gate, the off-state current and gate leakage current of GaN HEMTs improved considerably. This study verified that CuO is a promising gate candidate for fabricating low-cost, normally off AlGaN/GaN HEMTs.
Keywords
URL[Source Record]
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
National Natural Science Foundation of China[62274082];Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20200109141233476];Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20210324120409025];Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20220530115411025];
ESI Research Field
MATERIALS SCIENCE
Scopus EID
2-s2.0-85142176334
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/412533
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen,518055,China
3.School of Microelectronics,Fudan University,Shanghai,200433,China
First Author AffilicationSUSTech Institute of Microelectronics
Corresponding Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology;  
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Lu,Honghao,Wen,Kangyao,Du,Fangzhou,et al. Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2023,154.
APA
Lu,Honghao.,Wen,Kangyao.,Du,Fangzhou.,Tang,Chuying.,Cheng,Wei Chih.,...&Yu,Hongyu.(2023).Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,154.
MLA
Lu,Honghao,et al."Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 154(2023).
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