中文版 | English
Title

Sub-band response of PZT photodetector controlled by back-gate voltage

Author
Corresponding AuthorSu,Longxing; Zhu,Yuan
Publication Years
2022-12-15
DOI
Source Title
ISSN
0022-3727
EISSN
1361-6463
Volume55Issue:50
Abstract
Sub-band energy levels induced photo-conduction mechanisms play a significant role in the extension of the response spectra within a photodetector. Herein, we reported a PbZrTiO (PZT) based photodetector for sub-band photoresponse excited by a 450 nm blue laser. Sub-band induced by the defects acts as the intermediate state for the intra-band transition excited by the blue laser, in which the photon energy is smaller than the bandgap of the PZT thin film. Within both gate-controlled and blue laser driven operations, the source to drain current (I ) can be precisely modulated. The photocurrent and response speeds of the device are also studied under air and vacuum conditions, which shows negligible fluctuations under different atmospheres and excludes the negative influence from the defect-related surface states. The proposed device configuration provides a simple and cost-effective visible light driven photodetector, which may give rise to an interesting route towards optoelectronic devices based on ferroelectric material.
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URL[Source Record]
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Language
English
SUSTech Authorship
First ; Corresponding
WOS Accession No
WOS:000878379800001
ESI Research Field
PHYSICS
Scopus EID
2-s2.0-85142194819
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/412546
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.Key Laboratory of Energy Conversion and Storage Technologies,Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China
First Author AffilicationSUSTech Institute of Microelectronics
Corresponding Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Chen,Anqi,Lv,You,Su,Longxing,et al. Sub-band response of PZT photodetector controlled by back-gate voltage[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2022,55(50).
APA
Chen,Anqi,Lv,You,Su,Longxing,&Zhu,Yuan.(2022).Sub-band response of PZT photodetector controlled by back-gate voltage.JOURNAL OF PHYSICS D-APPLIED PHYSICS,55(50).
MLA
Chen,Anqi,et al."Sub-band response of PZT photodetector controlled by back-gate voltage".JOURNAL OF PHYSICS D-APPLIED PHYSICS 55.50(2022).
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