Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces
Interfacial magnetism stimulates the discovery of giant magnetoresistance (MR) and spin–orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides have seldom been explored due to the difficulty in synthesizing high-quality nitride films with correct compositions. Here, the fabrication of single-crystalline ferromagnetic FeN thin films with precisely controlled thicknesses is reported. As film thickness decreases, the magnetization dramatically deteriorates, and the electronic state changes from metallic to insulating. Strikingly, the high-temperature ferromagnetism is maintained in a FeN layer with a thickness down to 2 u.c. (≈8 Å). The MR exhibits a strong in-plane anisotropy; meanwhile, the anomalous Hall resistivity reverses its sign when the FeN layer thickness exceeds 5 u.c. Furthermore, a sizable exchange bias is observed at the interfaces between a ferromagnetic FeN and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using the cylinder diameter engineering technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives toward practical applications.
NI Journal Papers ; NI论文
National Key Basic Research Program of China["2020YFA0309100","2019YFA0308500"] ; National Natural Science Foundation of China["11974390","11721404","11874412","12174437"] ; Beijing Nova Program of Science and Technology[Z191100001119112] ; Beijing Natural Science Foundation ; Strategic Priority Research Program (B) of the Chinese Academy of Sciences[XDB33030200]
|WOS Research Area|
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
|WOS Accession No|
|ESI Research Field|
Cited Times [WOS]:7
|Document Type||Journal Article|
|Department||Department of Physics|
1.Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China
2.Department of Physics & Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,100049,China
3.Spallation Neutron Source Science Center,Dongguan,523803,China
4.Department of Physics,Saint Joseph's University,Philadelphia,19131,United States
5.Neutron Scattering Division,Oak Ridge National Laboratory,Oak Ridge,37831,United States
6.Songshan Lake Materials Laboratory,Dongguan,Guangdong,523808,China
7.Key Laboratory of Material Physics & School of Physics and Microelectronics,Zhengzhou University,Zhengzhou,450001,China
8.National Center for Electron Microscopy in Beijing and School of Materials Science and Engineering,Tsinghua University,Beijing,100084,China
9.Department of Physics and Astronomy,University of Tennessee,Knoxville,37996,United States
10.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
|Corresponding Author Affilication||Department of Physics|
Jin，Qiao,Zhang，Qinghua,Bai，He,et al. Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces[J]. ADVANCED MATERIALS,2022.
Jin，Qiao.,Zhang，Qinghua.,Bai，He.,Huon，Amanda.,Charlton，Timothy.,...&Guo，Er Jia.(2022).Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces.ADVANCED MATERIALS.
Jin，Qiao,et al."Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces".ADVANCED MATERIALS (2022).
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