| Title | Anisotropic photoresponse behavior of a LaAlO3 single-crystal-based vacuum-ultraviolet photodetector |
| Author | |
| Corresponding Author | Sun，Haiding |
| Publication Years | 2022
|
| DOI | |
| Source Title | |
| ISSN | 2040-3364
|
| EISSN | 2040-3372
|
| Abstract | Nowadays, vacuum-ultraviolet (VUV) photodetectors (PDs) have attracted extensive attention owing to their potential applications in space exploration, radiation monitoring, and the semiconductor industry. Benefiting from its intrinsic ultra-wide band-gap, chemical robustness, and low-cost features, LaAlO shows great promise in developing next-generation compact, cheap, and easy-to-fabricate VUV PDs. In this work, we report the unique anisotropic photoresponse behavior of LaAlO single crystals for VUV photodetection applications. First of all, with the guidance of density functional theory (DFT) calculations along with the comprehensive material characterization, the anisotropic carrier transport behavior of LaAlO single crystals was confirmed. Thereafter, after exploring the metal-semiconductor-metal (MSM) device configuration along different substrate orientations, including (100), (110), and (111)-LaAlO single crystals, we found that the (110)-LaAlO VUV PD exhibits the best device performance under VUV illumination, with a responsivity of 2.23 mA W, a high detectivity of 3.72 × 10 Jones, and a photo-to-dark-current ratio of 5.48 × 10. This work not only provides a feasible avenue to explore the anisotropic optoelectronic behavior of ultra-wide band-gap semiconductors but also expands the application of the low-cost oxide perovskite family in the field of VUV photodetection. |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | Others
|
| WOS Accession No | WOS:000882111900001
|
| Scopus EID | 2-s2.0-85142245236
|
| Data Source | Scopus
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/412583 |
| Department | Department of Materials Science and Engineering |
| Affiliation | 1.School of Microelectronics,University of Science and Technology of China,Hefei,230029,China 2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China 3.State Key Laboratory of Optoelectronic Materials and Technologies,School of Materials,Sun Yat-sen University,Guangzhou,510275,China |
| First Author Affilication | Department of Materials Science and Engineering |
| Recommended Citation GB/T 7714 |
Sun，Xiyu,Wang，Danhao,Memon，Muhammad Hunain,et al. Anisotropic photoresponse behavior of a LaAlO3 single-crystal-based vacuum-ultraviolet photodetector[J]. Nanoscale,2022.
|
| APA |
Sun，Xiyu.,Wang，Danhao.,Memon，Muhammad Hunain.,Zhu，Siqi.,Yu，Huabin.,...&Sun，Haiding.(2022).Anisotropic photoresponse behavior of a LaAlO3 single-crystal-based vacuum-ultraviolet photodetector.Nanoscale.
|
| MLA |
Sun，Xiyu,et al."Anisotropic photoresponse behavior of a LaAlO3 single-crystal-based vacuum-ultraviolet photodetector".Nanoscale (2022).
|
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment