| Title | Air Stable High Mobility ALD ZnO TFT With HfO2 Passivation Layer Suitable For CMOS-BEOL Integration |
| Author | |
| Corresponding Author | M. Shen; Y. Li |
| Publication Years | 2022-06
|
| Conference Name | 2022 IEEE CSTIC
|
| Conference Date | 2022-3
|
| Conference Place | Shanghai, China
|
| SUSTech Authorship | First
; Corresponding
|
| Data Source | 人工提交
|
| Document Type | Conference paper |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/415849 |
| Department | SUSTech Institute of Microelectronics |
| Affiliation | 1.Southern University of Science and Technology, Shenzhen 518055, China 2.Harbin Institute of Technology, Harbin 150001, China |
| First Author Affilication | Southern University of Science and Technology |
| Corresponding Author Affilication | Southern University of Science and Technology; |
| First Author's First Affilication | Southern University of Science and Technology |
| Recommended Citation GB/T 7714 |
W. Wang,J. Lu,J. Lan,et al. Air Stable High Mobility ALD ZnO TFT With HfO2 Passivation Layer Suitable For CMOS-BEOL Integration[C],2022.
|
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Air_Stable_High_Mobi（3158KB） | Restricted Access | -- | ||||
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