| Title | Hf1-xZrxO2 RRAM Prepared via Co-Sputtering with High Uniformity, Fast Switching Time of 10 ns, and Low Switching Energy of 20 pJ |
| Author | |
| Corresponding Author | Mei Shen; Yida Li |
| Publication Years | 2022-09
|
| Conference Name | 2022 International Conference on Solid State Devices and Materials (SSDM)
|
| Conference Date | 2022-09-27
|
| Conference Place | 日本
|
| SUSTech Authorship | First
; Corresponding
|
| Data Source | 人工提交
|
| Document Type | Conference paper |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/415850 |
| Department | Southern University of Science and Technology 工学院_深港微电子学院 |
| Affiliation | 1.Southern University of Science and Technology, Shenzhen 518055, China 2.School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, China 200240 3.Shenzhen Longsys Electronics Co., Ltd, Shenzhen 518000, China |
| First Author Affilication | Southern University of Science and Technology |
| Corresponding Author Affilication | Southern University of Science and Technology |
| First Author's First Affilication | Southern University of Science and Technology |
| Recommended Citation GB/T 7714 |
Quanzhou Zhu,Jun Lan,Bing Zhou,et al. Hf1-xZrxO2 RRAM Prepared via Co-Sputtering with High Uniformity, Fast Switching Time of 10 ns, and Low Switching Energy of 20 pJ[C],2022.
|
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3_文章.pdf（601KB） | Restricted Access | -- | ||||
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