中文版 | English
Title

Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance

Author
Corresponding AuthorQing,Wang; HongYu,Yu
Publication Years
2022-11-21
DOI
Source Title
ISSN
0003-6951
EISSN
1077-3118
Volume121Issue:21Pages:212105
Abstract

In this work, we use Si/Tl5Al1/TiN for a source/drain ohmic contact to demonstrate an ultra-low contact resistance of 0.11 omega mm (rho(c) = 2.62 x 10(-7) omega cm(2)) on non-recessed i-InAlN/GaN heterostructures. The Ti5Al1 alloy was used to suppress the out-diffusion of Al and extract N from the InAlN layer, which aided the formation of ohmic contact by improving the tunneling efficiency of electrons, as we have reported in the past work. A thin Si inter-layer combined with the Ti5Al1 alloy is proposed to further reduce contact resistance. A heavy n-type InAlN layer was obtained through doping with Si atoms to improve the tunneling transport of electrons. Furthermore, the TiN inclusions penetrated into the GaN channel because the in-diffused Si promoted the decomposition of GaN at a high annealing temperature and the in-diffused Ti reacted with GaN. These TiN inclusions provided direct contact with two-dimensional electron gas, offering an additional path for the injection of electrons into the channel. The tunneling and spike mechanism worked alternately to lower the contact resistance at different annealing temperatures (dividing at 900 & DEG;C), implying that the joint effect of tunneling and the spike mechanism was initially promoted in the formation of ohmic contact. The mechanism of this Si/Ti5Al1/TiN ohmic contact was fully understood through microscopic and thermodynamic analyses. These results shed light on the mechanism for the formation of ohmic contact in a gold-free metal stack for GaN-based HEMTs. Published under an exclusive license by AIP Publishing.

URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
First ; Corresponding
Funding Project
Fabrication of Normally-Off GaN Devices based on In-situ SiNx Passivation and Selective Area Growth Recessed-Gate Techniques and the Reliability Study (National Natural Science Foundation of China)[62274082] ; Research on the fabrication and mechanism of GaN power and RF devices[JCYJ20200109141233476] ; Research on the GaN Chip for 5G Applications[JCYJ20210324120409025] ; Research on high-reliable GaN power device and the related industrial power system[HZQB-KCZYZ-2021052] ; Hong Kong Research Grant Council[27206321] ; National Natural Science Foundation of China[62122004]
WOS Research Area
Physics
WOS Subject
Physics, Applied
WOS Accession No
WOS:000889076100004
Publisher
ESI Research Field
PHYSICS
Data Source
人工提交
Publication Status
在线出版
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/416026
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
2.Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
3.ACCESS—AI Chip Center for Emerging Smart Systems, InnoHK Centers, Hong Kong Science Park, Hong Kong
4.Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China
5.GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen 518055, China
First Author AffilicationSUSTech Institute of Microelectronics
Corresponding Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology;  
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Yang,Jiang,FangZhou,Du,JiaQi,He,et al. Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance[J]. APPLIED PHYSICS LETTERS,2022,121(21):212105.
APA
Yang,Jiang.,FangZhou,Du.,JiaQi,He.,ZePeng,Qiao.,ChuYing,Tang.,...&HongYu,Yu.(2022).Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.APPLIED PHYSICS LETTERS,121(21),212105.
MLA
Yang,Jiang,et al."Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance".APPLIED PHYSICS LETTERS 121.21(2022):212105.
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