All-electrical switching of a topological non-collinear antiferromagnet at room temperature
|Corresponding Author||Hai-Zhou,Lu; Kaiyou,Wang|
|Joint first author||Yongcheng,Deng; Xionghua,Liu; Yiyuan,Chen; Zongzheng,Du|
Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 x 10(6) A center dot cm(-2), we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn, with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.
共同第一 ; Corresponding
|WOS Research Area|
Science & Technology - Other Topics
|WOS Accession No|
Web of Science
Cited Times [WOS]:5
|Document Type||Journal Article|
|Department||Department of Physics|
1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3.Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
4.Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
5.Beijing Academy of Quantum Information Sciences, Beijing 100193, China
6.Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Science, Beijing 100049, China
|Corresponding Author Affilication||Department of Physics; Institute for Quantum Science and Engineering|
Yongcheng,Deng,Xionghua,Liu,Yiyuan,Chen,et al. All-electrical switching of a topological non-collinear antiferromagnet at room temperature[J]. National Science Review,2023,10(2).
Yongcheng,Deng.,Xionghua,Liu.,Yiyuan,Chen.,Zongzheng,Du.,Nai,Jiang.,...&Kaiyou,Wang.(2023).All-electrical switching of a topological non-collinear antiferromagnet at room temperature.National Science Review,10(2).
Yongcheng,Deng,et al."All-electrical switching of a topological non-collinear antiferromagnet at room temperature".National Science Review 10.2(2023).
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