中文版 | English
Title

Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction

Author
Corresponding AuthorJiang,Mingming; Fang,Xiaosheng; Kan,Caixia
Publication Years
2022
DOI
Source Title
ISSN
2195-1071
EISSN
2195-1071
Abstract
Polarization-sensitive photodetectors (PDs) based on anisotropic materials spark considerable interest for their potential applications in security surveillance, optical switches, and remote sensing. However, high-thickness or bulk anisotropic materials generally exhibit low polarization sensitivity, hindering their practical applications in polarization photodetection. Herein, a near-infrared (NIR) PD based on a p-type SbSe microbelt (MB)/n-GaN heterojunction is proposed. The SbSe MB/GaN PD effectively combines the anisotropy of the SbSe MB with the heterogeneous integration. The PD presents self-powered detection properties with a responsivity over 12 mA W, a specific detectivity exceeding 5 × 10 Jones, and a response speed (the rising/decaying times ≈74 ms/75 ms) under NIR illumination. More importantly, the heterojunction-based PD has a higher anisotropy ratio of 1.37, which is 1.3 times amplified as compared to the vertical photoconductive-type PDs (the anisotropy ratio of 1.06). The p-n junction's effect on carrier generation and recombination causes the increased polarization sensitivity of SbSe MB/GaN PDs, as confirmed by finite element method analysis. This work not only offers a deeper insight into polarization sensitivity regulated by junction or interface but also provides a practical method for developing high-sensitivity polarization detectors based on high-thickness or bulk anisotropic materials.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
National Natural Science Foundation of China["11974182","11874220"] ; Funding for Outstanding Doctoral Dissertation in NUAA[BCXJ22-14]
WOS Research Area
Materials Science ; Optics
WOS Subject
Materials Science, Multidisciplinary ; Optics
WOS Accession No
WOS:000892401600001
Publisher
Scopus EID
2-s2.0-85143203827
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/416557
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing,211106,China
2.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
3.State Key Laboratory of Molecular Engineering of Polymers,Department of Materials Science,Fudan University,Shanghai,200433,China
Recommended Citation
GB/T 7714
Wan,Peng,Jiang,Mingming,Wei,Yun,et al. Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction[J]. Advanced Optical Materials,2022.
APA
Wan,Peng.,Jiang,Mingming.,Wei,Yun.,Xu,Tong.,Liu,Yang.,...&Kan,Caixia.(2022).Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction.Advanced Optical Materials.
MLA
Wan,Peng,et al."Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction".Advanced Optical Materials (2022).
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