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Title

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Author
Corresponding AuthorXu,Shijie
Publication Years
2022
DOI
Source Title
ISSN
1932-7447
EISSN
1932-7455
Abstract
The yellow luminescence (YL) is a famous acceptor-associated light emission phenomenon in GaN, which is a technologically important wide-bandgap semiconductor having tremendous applications in short-wavelength optoelectronic devices and high-power/high-temperature electronic devices. However, there have been few studies on the broadening lineshape analysis and substantial negative thermal quenching of the YL band in GaN. In this article, the large negative thermal quenching (NTQ) phenomenon of the YL band in a series of Si-doped GaN samples is observed and investigated in detail under the sub-bandgap optical excitation, which is unobservable under the usual above-bandgap optical excitation. Based on rate equations of holes, a simple model is developed to quantitatively analyze the observed NTQ data, unveiling that the thermal transfer of holes excited from the shallow acceptors located at ∼300 meV above the valence band maximum to the YL deep acceptors shall be responsible for the observed large NTQ in the Si-doped GaN. Above and beyond, the underdamped multimode Brownian oscillator (MBO) theory was employed to analyze the YL lineshape at 290 K. Several important physical parameters governing the YL process, such as the Huang-Rhys factor, zero-phonon line location, dissipating coefficient of acoustic phonon bath, etc., were thus determined. The YL deep acceptor level was estimated to be located at ∼840 meV above the valence band maximum.
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
[12074324] ; [11374247] ; [JCJY 2 0 1 80508163404043] ; [JCYJ20170818141709893]
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS Subject
Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000892726800001
Publisher
Scopus EID
2-s2.0-85143069378
Data Source
Scopus
Citation statistics
Cited Times [WOS]:2
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/416561
DepartmentDepartment of Physics
量子科学与工程研究院
Affiliation
1.Department of Physics and Shenzhen Institute of Research and Innovation (HKU-SIRI),The University of Hong Kong,Pokfulam Road,999077,Hong Kong
2.Department of Physics and Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
3.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing,Haidian District,100083,China
4.Department of Optical Science and Engineering,School of Information Science and Technology,Fudan University,Shanghai,Yangpu District,200438,China
First Author AffilicationDepartment of Physics;  Institute for Quantum Science and Engineering
Recommended Citation
GB/T 7714
Wang,Xiaorui,Zhao,Degang,Ning,Jiqiang,et al. Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN[J]. Journal of Physical Chemistry C,2022.
APA
Wang,Xiaorui,Zhao,Degang,Ning,Jiqiang,Yu,Dapeng,&Xu,Shijie.(2022).Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN.Journal of Physical Chemistry C.
MLA
Wang,Xiaorui,et al."Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN".Journal of Physical Chemistry C (2022).
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