Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection
|Corresponding Author||Xing，Guichuan; Wang，Kai|
Enhanced and balanced carrier injection is essential to achieve highly efficient green indium phosphide (InP) quantum dot light-emitting diodes (QLEDs). However, due to the poor injection of holes in green InP QLEDs, the carrier injection is usually balanced by suppressing the strong electron injection, which decreases the radiation recombination rate dramatically. Here, an electric dipole layer is introduced to enhance the hole injection in the green InP QLED with a high mobility electron transport layer (ETL). The ultra-thin MoO electric dipole layer is demonstrated to form a positive built-in electric field at the interface of the hole injection layer (HIL) and hole transport layer (HTL) due to its deep conduction band level. Simulation and experimental results support that strong electric fields are produced for efficient hole hopping, and the carrier recombination rate is substantially increased. Consequently, the green InP QLEDs based on enhanced electron and hole injection have achieved a high luminance of 52 730 cd m and 1.7 times external quantum efficiency (EQE) enhancement from 4.25% to 7.39%. This work has provided an effective approach to enhance carrier injection in green InP QLEDs and indicates the feasibility to realize highly efficient green InP QLEDs.
National Key Research and Development Program[2019YFB1704600] ; National Natural Science Foundation of China[
|WOS Research Area|
Chemistry ; Science & Technology - Other Topics ; Materials Science
Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
|WOS Accession No|
Cited Times [WOS]:2
|Document Type||Journal Article|
|Department||Department of Electrical and Electronic Engineering|
1.Institute of Applied Physics and Materials Engineering,University of Macau,Macau,999078,Macao
2.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China
4.College of New Materials and New Energies,Shenzhen Technology University,Shenzhen,518118,China
|First Author Affilication||Department of Electrical and Electronic Engineering; Southern University of Science and Technology|
|Corresponding Author Affilication||Department of Electrical and Electronic Engineering; Southern University of Science and Technology|
Zhang，Tianqi,Liu，Pai,Zhao，Fangqing,et al. Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection[J]. Nanoscale Advances,2022,5:385-392.
Zhang，Tianqi.,Liu，Pai.,Zhao，Fangqing.,Tan，Yangzhi.,Sun，Jiayun.,...&Wang，Kai.(2022).Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection.Nanoscale Advances,5,385-392.
Zhang，Tianqi,et al."Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection".Nanoscale Advances 5(2022):385-392.
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