中文版 | English
Title

Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection

Author
Corresponding AuthorXing,Guichuan; Wang,Kai
Publication Years
2022
DOI
Source Title
ISSN
2516-0230
EISSN
2516-0230
Volume5Pages:385-392
Abstract

Enhanced and balanced carrier injection is essential to achieve highly efficient green indium phosphide (InP) quantum dot light-emitting diodes (QLEDs). However, due to the poor injection of holes in green InP QLEDs, the carrier injection is usually balanced by suppressing the strong electron injection, which decreases the radiation recombination rate dramatically. Here, an electric dipole layer is introduced to enhance the hole injection in the green InP QLED with a high mobility electron transport layer (ETL). The ultra-thin MoO electric dipole layer is demonstrated to form a positive built-in electric field at the interface of the hole injection layer (HIL) and hole transport layer (HTL) due to its deep conduction band level. Simulation and experimental results support that strong electric fields are produced for efficient hole hopping, and the carrier recombination rate is substantially increased. Consequently, the green InP QLEDs based on enhanced electron and hole injection have achieved a high luminance of 52 730 cd m and 1.7 times external quantum efficiency (EQE) enhancement from 4.25% to 7.39%. This work has provided an effective approach to enhance carrier injection in green InP QLEDs and indicates the feasibility to realize highly efficient green InP QLEDs.

URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Corresponding
Funding Project
National Key Research and Development Program[2019YFB1704600] ; National Natural Science Foundation of China[
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS Subject
Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000888907600001
Publisher
Scopus EID
2-s2.0-85142767922
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/416578
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.Institute of Applied Physics and Materials Engineering,University of Macau,Macau,999078,Macao
2.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China
4.College of New Materials and New Energies,Shenzhen Technology University,Shenzhen,518118,China
First Author AffilicationDepartment of Electrical and Electronic Engineering;  Southern University of Science and Technology
Corresponding Author AffilicationDepartment of Electrical and Electronic Engineering;  Southern University of Science and Technology
Recommended Citation
GB/T 7714
Zhang,Tianqi,Liu,Pai,Zhao,Fangqing,et al. Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection[J]. Nanoscale Advances,2022,5:385-392.
APA
Zhang,Tianqi.,Liu,Pai.,Zhao,Fangqing.,Tan,Yangzhi.,Sun,Jiayun.,...&Wang,Kai.(2022).Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection.Nanoscale Advances,5,385-392.
MLA
Zhang,Tianqi,et al."Electric dipole modulation for boosting carrier recombination in green InP QLEDs under strong electron injection".Nanoscale Advances 5(2022):385-392.
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