中文版 | English
Title

Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films

Author
Corresponding AuthorQian, Dong; Wray, L. Andrew; Miao, Lin
Publication Years
2022-12-06
DOI
Source Title
ISSN
2469-9950
EISSN
2469-9969
Volume106Issue:24
Abstract

The orbital occupancy, as the origin of Hund's rule coupling, provides critical information in understanding the multiorbital iron-based superconductors. The one-unit-cell (1UC) FeSe thin film on a SrTiO3 substrate with superconductive Tc above 60 K has been reported with unique electronic structures as well as orbital occupancy. In this paper, we present the x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) study of the FeSe/STO thin films of different thicknesses. Together with the atomic multiplet simulation analysis, the FeSe/STO thin films (from 1UC to 10UC) are shown with the pure 3d6 electronic configuration which is identical to the bulk FeSe. Moreover, 1UC FeSe/STO is found to be distinctively more persistent in hosting the 3d6 configuration other than the thicker films under the oxidization process. The robustness of the 3d6 in 1UC FeSe/STO is discussed as a result of charge transfer from the substrate, as well as a mechanism to maintain the high-Tc superconductivity. Finally, our research calls for a further high-resolution RIXS study of the pristine superconductive 1UC FeSe/STO thin film.

URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Others
Funding Project
National Natural Science Foundation of China[
WOS Research Area
Materials Science ; Physics
WOS Subject
Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000897245600004
Publisher
ESI Research Field
PHYSICS
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/420800
DepartmentInstitute for Quantum Science and Engineering
Affiliation
1.Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China
2.Shanghai Jiao Tong Univ, Sch Phys & Astron, Shanghai 200240, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
5.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
6.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
7.Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Shenyang Natl Lab Mat Sci,Minist Educ, Shanghai 200240, Peoples R China
8.Shanghai Jiao Tong Univ, Tsung Dao Lee Inst, Shanghai 200240, Peoples R China
9.NYU, Dept Phys, New York, NY 10003 USA
Recommended Citation
GB/T 7714
Shen, Jingdong,Jiang, Wenxiang,Zhu, Fengfeng,et al. Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films[J]. PHYSICAL REVIEW B,2022,106(24).
APA
Shen, Jingdong.,Jiang, Wenxiang.,Zhu, Fengfeng.,Wang, Guan-yong.,Li, Huayao.,...&Miao, Lin.(2022).Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films.PHYSICAL REVIEW B,106(24).
MLA
Shen, Jingdong,et al."Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films".PHYSICAL REVIEW B 106.24(2022).
Files in This Item:
File Name/Size DocType Version Access License
2022 PhysRevB.106.24(1469KB) Restricted Access--
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