Title | Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films |
Author | |
Corresponding Author | Qian, Dong; Wray, L. Andrew; Miao, Lin |
Publication Years | 2022-12-06
|
DOI | |
Source Title | |
ISSN | 2469-9950
|
EISSN | 2469-9969
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Volume | 106Issue:24 |
Abstract | The orbital occupancy, as the origin of Hund's rule coupling, provides critical information in understanding the multiorbital iron-based superconductors. The one-unit-cell (1UC) FeSe thin film on a SrTiO3 substrate with superconductive Tc above 60 K has been reported with unique electronic structures as well as orbital occupancy. In this paper, we present the x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) study of the FeSe/STO thin films of different thicknesses. Together with the atomic multiplet simulation analysis, the FeSe/STO thin films (from 1UC to 10UC) are shown with the pure 3d6 electronic configuration which is identical to the bulk FeSe. Moreover, 1UC FeSe/STO is found to be distinctively more persistent in hosting the 3d6 configuration other than the thicker films under the oxidization process. The robustness of the 3d6 in 1UC FeSe/STO is discussed as a result of charge transfer from the substrate, as well as a mechanism to maintain the high-Tc superconductivity. Finally, our research calls for a further high-resolution RIXS study of the pristine superconductive 1UC FeSe/STO thin film. |
URL | [Source Record] |
Indexed By | |
Language | English
|
Important Publications | NI Journal Papers
|
SUSTech Authorship | Others
|
Funding Project | National Natural Science Foundation of China[
|
WOS Research Area | Materials Science
; Physics
|
WOS Subject | Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
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WOS Accession No | WOS:000897245600004
|
Publisher | |
ESI Research Field | PHYSICS
|
Data Source | Web of Science
|
Citation statistics |
Cited Times [WOS]:0
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/420800 |
Department | Institute for Quantum Science and Engineering |
Affiliation | 1.Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China 2.Shanghai Jiao Tong Univ, Sch Phys & Astron, Shanghai 200240, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 4.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China 5.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 6.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 7.Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Shenyang Natl Lab Mat Sci,Minist Educ, Shanghai 200240, Peoples R China 8.Shanghai Jiao Tong Univ, Tsung Dao Lee Inst, Shanghai 200240, Peoples R China 9.NYU, Dept Phys, New York, NY 10003 USA |
Recommended Citation GB/T 7714 |
Shen, Jingdong,Jiang, Wenxiang,Zhu, Fengfeng,et al. Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films[J]. PHYSICAL REVIEW B,2022,106(24).
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APA |
Shen, Jingdong.,Jiang, Wenxiang.,Zhu, Fengfeng.,Wang, Guan-yong.,Li, Huayao.,...&Miao, Lin.(2022).Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films.PHYSICAL REVIEW B,106(24).
|
MLA |
Shen, Jingdong,et al."Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films".PHYSICAL REVIEW B 106.24(2022).
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Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2022 PhysRevB.106.24(1469KB) | Restricted Access | -- |
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