中文版 | English
Title

单晶铜的制备方法

Author
First Inventor
邹定鑫
Original applicant
南方科技大学
First applicant
南方科技大学
Address of First applicant
518000 广东省深圳市南山区桃源街道学苑大道1088号
Current applicant
南方科技大学
Address of Current applicant
518000 广东省深圳市南山区桃源街道学苑大道1088号 (广东,深圳,南山区)
First Current Applicant
南方科技大学
Address of First Current Applicant
518000 广东省深圳市南山区桃源街道学苑大道1088号 (广东,深圳,南山区)
Application Number
CN202110075702.6
Application Date
2021-01-20
Open (Notice) Number
CN112899768B
Date Available
2022-09-23
Publication Years
2022-09-23
Status of Patent
授权
Legal Date
2022-09-23
Subtype
授权发明
SUSTech Authorship
First
Abstract
本发明属于材料技术领域,具体涉及一种单晶铜的制备方法。本发明单晶铜的制备方法中,通过将多晶铜置于石墨容器中进行退火处理,利用石墨容器的限域空间作用,将退火处理过程中的石英渣、灰尘颗粒等各种杂质隔离在石墨容器的外面,从而避免上述杂质对所得单晶铜造成杂质污染,不仅大大提高了所得单晶铜的表面洁净度和制备效率,而且可以获得大尺寸的单晶铜,使所得单晶铜具有更优异的性能。本发明提供的制备方法操作简单,无需对多晶铜进行复杂多样的表面预处理,有利于实现单晶铜的工业化制备。
Other Abstract
本发明属于材料技术领域,具体涉及一种单晶铜的制备方法。本发明单晶铜的制备方法中,通过将多晶铜置于石墨容器中进行退火处理,利用石墨容器的限域空间作用,将退火处理过程中的石英渣、灰尘颗粒等各种杂质隔离在石墨容器的外面,从而避免上述杂质对所得单晶铜造成杂质污染,不仅大大提高了所得单晶铜的表面洁净度和制备效率,而且可以获得大尺寸的单晶铜,使所得单晶铜具有更优异的性能。本发明提供的制备方法操作简单,无需对多晶铜进行复杂多样的表面预处理,有利于实现单晶铜的工业化制备。
CPC Classification Number
C30B1/02 ; C30B29/02 ; C22F1/08 ; C22F1/02 ; C21D9/46 ; Y02P10/20
IPC Classification Number
C30B1/02 ; C30B29/02 ; C22F1/08 ; C22F1/02 ; C21D9/46
INPADOC Legal Status
(+PATENT GRANT)[2022-09-23][CN]
INPADOC Patent Family Count
1
Extended Patent Family Count
1
Priority date
2021-01-20
Patent Agent
郝文婷
Agency
深圳中一联合知识产权代理有限公司
URL[Source Record]
Data Source
PatSnap
Document TypePatent
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/430287
DepartmentInstitute for Quantum Science and Engineering
理学院_物理系
Recommended Citation
GB/T 7714
邹定鑫,田圳,张振生,等. 单晶铜的制备方法[P]. 2022-09-23.
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