中文版 | English
Title

一种单层二硫化钼的使用方法和DNA的切割方法

Author
First Inventor
蒋兴宇
Original applicant
南方科技大学
First applicant
南方科技大学
Address of First applicant
518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant
南方科技大学
Address of Current applicant
518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant
南方科技大学
Address of First Current Applicant
518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number
CN201910401533.3
Application Date
2019-05-14
Open (Notice) Number
CN110079522B
Date Available
2022-12-13
Publication Years
2022-12-13
Status of Patent
授权
Legal Date
2022-12-13
Subtype
授权发明
SUSTech Authorship
First
Abstract
本发明提供了一种单层二硫化钼的使用方法和DNA的切割方法,所述单层二硫化钼用于切割DNA。本发明提供的DNA的切割方法在仅使用单层二硫化钼,不添加任何其他辅助试剂的情况下,在常温下即可实现DNA的切割。
Other Abstract
本发明提供了一种单层二硫化钼的使用方法和DNA的切割方法,所述单层二硫化钼用于切割DNA。本发明提供的DNA的切割方法在仅使用单层二硫化钼,不添加任何其他辅助试剂的情况下,在常温下即可实现DNA的切割。
CPC Classification Number
C12N15/10
IPC Classification Number
C12N15/10
INPADOC Legal Status
(+PATENT GRANT)[2022-12-13][CN]
INPADOC Patent Family Count
1
Extended Patent Family Count
1
Priority date
2019-05-14
Patent Agent
巩克栋
Agency
北京品源专利代理有限公司
URL[Source Record]
Data Source
PatSnap
Document TypePatent
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/430548
DepartmentDepartment of Biomedical Engineering
Recommended Citation
GB/T 7714
蒋兴宇,赵樱灿,徐佳仪. 一种单层二硫化钼的使用方法和DNA的切割方法[P]. 2022-12-13.
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