| Title | Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes? |
| Author | |
| Corresponding Author | Sun, Xiao Wei |
| Publication Years | 2023
|
| DOI | |
| Source Title | |
| ISSN | 2040-3364
|
| EISSN | 2040-3372
|
| Abstract | In quantum dot light-emitting diodes (QLEDs), even seemingly with interfacial exciton quenching between quantum dots (QDs) and the electron transport layer (ETL) limiting the device efficiency, the internal quantum efficiency of such QLEDs approaches 100%. Therefore, it is a puzzle that QLEDs exhibit high performance although they suffer from interfacial exciton quenching. In this work, we solve this puzzle by identifying the cause of the interfacial exciton quenching. By analyzing the optical characteristics of pristine and encapsulated QD-ETL films, the interfacial exciton quenching in the pristine QD-ETL film is attributed to O-2-induced charge transfer. We further investigate the charge transfer mechanism and its effect on the performance of QLEDs. Finally, we show the photodegradation of the pristine QD-ETL film under UV irradiation. Our work bridges interfacial exciton quenching and high performance in hybrid QLEDs and highlights the significance of encapsulation in QLEDs. |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | National Key Research and Development Program of China["2021YFB3602703","2022YFB3606504","2022YFB3602903"]
; Key-Area Research and Development Program of Guangdong Province["2019B010925001","2019B010924001"]
; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007]
; Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549]
|
| WOS Research Area | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS Subject | Chemistry, Multidisciplinary
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
|
| WOS Accession No | WOS:000920735600001
|
| Publisher | |
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/430727 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Minist Educ, Key Lab Energy Convers & Storage Technol,Guangdong, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
| First Author Affilication | Southern University of Science and Technology; Department of Electrical and Electronic Engineering |
| Corresponding Author Affilication | Southern University of Science and Technology; Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Southern University of Science and Technology |
| Recommended Citation GB/T 7714 |
Qu, Xiangwei,Liu, Wenbo,Li, Depeng,et al. Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?[J]. Nanoscale,2023.
|
| APA |
Qu, Xiangwei.,Liu, Wenbo.,Li, Depeng.,Ma, Jingrui.,Gu, Mi.,...&Sun, Xiao Wei.(2023).Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?.Nanoscale.
|
| MLA |
Qu, Xiangwei,et al."Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?".Nanoscale (2023).
|
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment