High-Voltage a-Si TFTs Using Dual-Gate With a Common Gate Structure by Channel Electrons Concentration Regulation

Jiaze Liu; Rongyue Liu; Shaohu Zhan; Qin Luo; Rifei Chen; Xing Cheng

2023

10.1109/TED.2023.3241572

IEEE Transactions on Electron Devices   Impact Factor & Quartile

1557-9646

1557-9646

In this work, we report high-voltage amorphous silicon (a-Si) thin-film transistors (TFTs) using dual gate with a common gate structure, in which there are two extended electrodes with the same length at the junction of the two TFTs to regulate the electrons concentration in the channel. The working principle of the high-voltage a-Si TFTs is analyzed and their electrical performances are characterized. Results show that the high-voltage a-Si TFTs exhibit a maximum operating voltage (VDS) over 370 V and a stable output current. Meanwhile, the electrical performances of the high-voltage a-Si TFTs are not significantly degraded compared to the conventional a-Si TFTs. The fabrication process is similar to that of conventional a-Si TFTs and has low cost, which makes the high-voltage a-Si TFTs have broad application prospects in high-voltage electronics.

Amorphous silicon (a-Si) channel electron concentration regulation high voltage thin-film transistors (TETs)

SCI

English

First

National Natural Science Foundation of China[31927802] ; Outstanding Scientific and Technological Innovation Talent Program of Shenzhen[RCJC20200714114436046]

Engineering ; Physics

Engineering, Electrical & Electronic ; Physics, Applied

WOS:000936253100001

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

IEEE

Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China

Jiaze Liu,Rongyue Liu,Shaohu Zhan,et al. High-Voltage a-Si TFTs Using Dual-Gate With a Common Gate Structure by Channel Electrons Concentration Regulation[J]. IEEE Transactions on Electron Devices,2023,PP(99):1-5.

Jiaze Liu,Rongyue Liu,Shaohu Zhan,Qin Luo,Rifei Chen,&Xing Cheng.(2023).High-Voltage a-Si TFTs Using Dual-Gate With a Common Gate Structure by Channel Electrons Concentration Regulation.IEEE Transactions on Electron Devices,PP(99),1-5.

Jiaze Liu,et al."High-Voltage a-Si TFTs Using Dual-Gate With a Common Gate Structure by Channel Electrons Concentration Regulation".IEEE Transactions on Electron Devices PP.99(2023):1-5.