Title | Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation |
Author | |
Publication Years | 2023-02-01
|
DOI | |
Source Title | |
ISSN | 0925-9635
|
EISSN | 1879-0062
|
Volume | 132 |
Abstract | Improving the yield of nitrogen-vacancy (NV) color centers at the nanoscale can provide a deeper understanding of the formation mechanism of NV color centers and boost the application prospective. Molecular dynamics (MD) simulation of nitrogen ion irradiation was first used to study the dependence of the implanted N configurations on incidence angle and annealing temperature, hence determine the most appropriate conditions for NV color centers formation. A novel method of pre-doping the initial bulk diamond substrate with N impurities was proved to successfully prepare NV color centers by using low-energy nitrogen ion implantation and subsequent annealing. Simulation results indicated that NV color centers can create in a doped model at about 1000 ppm with yields up to 10 %. It should be noted that the optimal time of high-temperature annealing needs to be optimized to obtain different kinds of NV color centers for different applications. Finally, the changes inside the substrate under high fluence implantation are analyzed. The enhancement for the yield of NV centers in nano -scale is crucial for strengthening future quantum metrology applications. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
|
SUSTech Authorship | Others
|
Funding Project | National Natural Science Foundation of China["52035009","51761135106"]
; State Key Laboratory of Precision Measuring Technology and Instruments[Pilt1705]
; Ministry of Education of China[B07014]
|
WOS Research Area | Materials Science
; Physics
|
WOS Subject | Materials Science, Multidisciplinary
; Materials Science, Coatings & Films
; Physics, Applied
; Physics, Condensed Matter
|
WOS Accession No | WOS:000924876400001
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Publisher | |
ESI Research Field | MATERIALS SCIENCE
|
Data Source | Web of Science
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Citation statistics |
Cited Times [WOS]:0
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/450764 |
Department | Department of Electrical and Electronic Engineering |
Affiliation | 1.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China 2.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China 3.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China 4.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China 5.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China 6.Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China |
Recommended Citation GB/T 7714 |
Wei,Zhao,Zongwei,Xu,Fei,Ren,et al. Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation[J]. DIAMOND AND RELATED MATERIALS,2023,132.
|
APA |
Wei,Zhao,Zongwei,Xu,Fei,Ren,Bing,Dong,Junlei,Zhao,&Pengfei,Wang.(2023).Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation.DIAMOND AND RELATED MATERIALS,132.
|
MLA |
Wei,Zhao,et al."Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation".DIAMOND AND RELATED MATERIALS 132(2023).
|
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