中文版 | English
Title

Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation

Author
Publication Years
2023-02-01
DOI
Source Title
ISSN
0925-9635
EISSN
1879-0062
Volume132
Abstract
Improving the yield of nitrogen-vacancy (NV) color centers at the nanoscale can provide a deeper understanding of the formation mechanism of NV color centers and boost the application prospective. Molecular dynamics (MD) simulation of nitrogen ion irradiation was first used to study the dependence of the implanted N configurations on incidence angle and annealing temperature, hence determine the most appropriate conditions for NV color centers formation. A novel method of pre-doping the initial bulk diamond substrate with N impurities was proved to successfully prepare NV color centers by using low-energy nitrogen ion implantation and subsequent annealing. Simulation results indicated that NV color centers can create in a doped model at about 1000 ppm with yields up to 10 %. It should be noted that the optimal time of high-temperature annealing needs to be optimized to obtain different kinds of NV color centers for different applications. Finally, the changes inside the substrate under high fluence implantation are analyzed. The enhancement for the yield of NV centers in nano -scale is crucial for strengthening future quantum metrology applications.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
National Natural Science Foundation of China["52035009","51761135106"] ; State Key Laboratory of Precision Measuring Technology and Instruments[Pilt1705] ; Ministry of Education of China[B07014]
WOS Research Area
Materials Science ; Physics
WOS Subject
Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000924876400001
Publisher
ESI Research Field
MATERIALS SCIENCE
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/450764
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
2.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
3.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
4.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
5.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
6.Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
Recommended Citation
GB/T 7714
Wei,Zhao,Zongwei,Xu,Fei,Ren,et al. Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation[J]. DIAMOND AND RELATED MATERIALS,2023,132.
APA
Wei,Zhao,Zongwei,Xu,Fei,Ren,Bing,Dong,Junlei,Zhao,&Pengfei,Wang.(2023).Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation.DIAMOND AND RELATED MATERIALS,132.
MLA
Wei,Zhao,et al."Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation".DIAMOND AND RELATED MATERIALS 132(2023).
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