| Title | Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride |
| Author | |
| Corresponding Author | Hua, Mengyuan |
| Publication Years | 2023-02-01
|
| DOI | |
| Source Title | |
| ISSN | 0935-9648
|
| EISSN | 1521-4095
|
| Abstract | Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN-based devices, especially in terms of device stability and reliability. In this study, this challenge is overcome by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in situ two-step "oxidation-reconfiguration" process. The O plasma treatment overcomes the chemical inertness of the GaN surface, and sequential thermal annealing manipulates the kinetic-thermodynamic reaction pathways to create a metastable GaON nanolayer with a wurtzite lattice. The GaN-derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate. These physical properties can be further leveraged to enhance the performance of GaN-based devices in various applications, such as power systems, complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| Important Publications | NI Journal Papers
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | National Natural Science Foundation of China[61904078]
; Guang Dong Basic and Applied Basic Research Foundation[2022A1515010115]
; Shenzhen Science and Technology Innovation Committee[SGDX2020110309460101]
|
| WOS Research Area | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS Subject | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
| WOS Accession No | WOS:000930673100001
|
| Publisher | |
| ESI Research Field | MATERIALS SCIENCE
|
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/450774 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| Corresponding Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Chen, Junting,Zhao, Junlei,Feng, Sirui,et al. Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride[J]. ADVANCED MATERIALS,2023.
|
| APA |
Chen, Junting.,Zhao, Junlei.,Feng, Sirui.,Zhang, Li.,Cheng, Yan.,...&Hua, Mengyuan.(2023).Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride.ADVANCED MATERIALS.
|
| MLA |
Chen, Junting,et al."Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride".ADVANCED MATERIALS (2023).
|
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment