中文版 | English
Title

Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Author
Corresponding AuthorHua, Mengyuan
Publication Years
2023-02-01
DOI
Source Title
ISSN
0935-9648
EISSN
1521-4095
Abstract
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN-based devices, especially in terms of device stability and reliability. In this study, this challenge is overcome by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in situ two-step "oxidation-reconfiguration" process. The O plasma treatment overcomes the chemical inertness of the GaN surface, and sequential thermal annealing manipulates the kinetic-thermodynamic reaction pathways to create a metastable GaON nanolayer with a wurtzite lattice. The GaN-derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate. These physical properties can be further leveraged to enhance the performance of GaN-based devices in various applications, such as power systems, complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion.
Keywords
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
First ; Corresponding
Funding Project
National Natural Science Foundation of China[61904078] ; Guang Dong Basic and Applied Basic Research Foundation[2022A1515010115] ; Shenzhen Science and Technology Innovation Committee[SGDX2020110309460101]
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000930673100001
Publisher
ESI Research Field
MATERIALS SCIENCE
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/450774
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China
First Author AffilicationDepartment of Electrical and Electronic Engineering
Corresponding Author AffilicationDepartment of Electrical and Electronic Engineering
First Author's First AffilicationDepartment of Electrical and Electronic Engineering
Recommended Citation
GB/T 7714
Chen, Junting,Zhao, Junlei,Feng, Sirui,et al. Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride[J]. ADVANCED MATERIALS,2023.
APA
Chen, Junting.,Zhao, Junlei.,Feng, Sirui.,Zhang, Li.,Cheng, Yan.,...&Hua, Mengyuan.(2023).Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride.ADVANCED MATERIALS.
MLA
Chen, Junting,et al."Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride".ADVANCED MATERIALS (2023).
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