Improved Performance of HfxZnyO-Based RRAM and its Switching Characteristics down to 4 K Temperature

Lan, Jun1; Li, Zhixiong1,2; Chen, Zhenjie1; Zhu, Quanzhou1; Wang, Wenhui1; Zaheer, Muhammad1; Lu, Jiqing1; Liang, Jinxuan3; Shen, Mei3; Chen, Peng1; Chen, Kai1; Zhang, Guobiao1; Wang, Zhongrui4; Zhou, Feichi1; Lin, Longyang1; Li, Yida1

2023

10.1002/aelm.202201250

Advanced Electronic Materials   Impact Factor & Quartile

2199-160X

The search for high-performance resistive random-access memory (RRAM) devices is essential to pave the way for highly efficient non-Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn-doped HfOx-based resistive random-access memory (HfZnO RRAM), with improved performance. As compared with HfOx RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3x), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 10(5) cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving approximate to 90% accuracy in a simulated multi-layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped-RRAM to be used in a wide range of temperatures including quantum computing and deep-space exploration is shown.

4 K cryogenic hafnium oxide resistive switching resistive random-access memory (RRAM) zinc

SCI

English

First ; Corresponding

National Natural Science Foundation of China["62174074","62274081","62104091","52273246"] ; Guangdong Young Innovative Talent Project Research Program[2021KQNCX077] ; Shenzhen Fundamental Research Program["JCYJ20220530115014032","JCYJ20220530115204009","JCYJ20190809143419448"] ; Special Funds for the Cultivation of Guangdong College Students' Scientific and Technological Innovation["pdjh2023c11507","pdjh2022b0455"]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000921342700001

WILEY

Web of Science

1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
2.Shenzhen Longsys Elect Co Ltd, Shenzhen 518057, Peoples R China
3.Southern Univ Sci & Technol, SUSTech Acad Adv Interdisciplinary Studies, Shenzhen 518055, Peoples R China
4.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong 999077, Peoples R China

Lan, Jun,Li, Zhixiong,Chen, Zhenjie,et al. Improved Performance of HfxZnyO-Based RRAM and its Switching Characteristics down to 4 K Temperature[J]. Advanced Electronic Materials,2023.

Lan, Jun.,Li, Zhixiong.,Chen, Zhenjie.,Zhu, Quanzhou.,Wang, Wenhui.,...&Li, Yida.(2023).Improved Performance of HfxZnyO-Based RRAM and its Switching Characteristics down to 4 K Temperature.Advanced Electronic Materials.

Lan, Jun,et al."Improved Performance of HfxZnyO-Based RRAM and its Switching Characteristics down to 4 K Temperature".Advanced Electronic Materials (2023).