Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Wang, Peiran1; Deng, Chenkai1; Cheng, Hongyu1; Cheng, Weichih1; Du, Fangzhou1; Tang, Chuying1; Geng, Chunqi2; Tao, Nick2; Wang, Qing1,3,4; Yu, Hongyu1,3,4

2023

10.3390/cryst13010110

CRYSTALS   Impact Factor & Quartile

2073-4352

In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP similar to 19.9% compared with GFP similar to 49.8% when a 1 ms duration pre-stress was applied with V-ds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of similar to 454.4 V compared to the GFP similar to 394.3 V and the basic devices similar to 57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of C-gs = 1.03 pF and C-gd = 0.13 pF than those of the GFP structure (i.e., C-gs = 1.89 pF and C-gd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (f(t)) of 46 GHz and a maximum oscillation frequency (f(max)) of 130 GHz than those of the GFP structure (i.e., f(t) = 27 GHz and f(max) = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.

AlGaN/GaN high-electron mobility transistors (HEMTs) floating field plate (FFP) breakdown voltage current collapse frequency response TCAD

SCI

English

First ; Corresponding

National Natural Science Foundation of China[62274082] ; Guangdong College Students' Scientific and Technological Innovation["JCYJ20220530115411025","JCYJ20200109141233476","JCYJ20210324120409025","HZQB-KCZYZ-2021052"] ; null[pdjh2023c21501]

Crystallography ; Materials Science

Crystallography ; Materials Science, Multidisciplinary

WOS:000917407600001

MDPI

Web of Science

1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
2.Maxscend Microelect Co Ltd, Wuxi 214072, Peoples R China
3.Southern Univ Sci & Technol, Engn Res Ctr Integrated Circuits Next Generat Comm, Minist Educ, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China

Wang, Peiran,Deng, Chenkai,Cheng, Hongyu,et al. Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate[J]. CRYSTALS,2023,13(1).

Wang, Peiran.,Deng, Chenkai.,Cheng, Hongyu.,Cheng, Weichih.,Du, Fangzhou.,...&Yu, Hongyu.(2023).Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate.CRYSTALS,13(1).

Wang, Peiran,et al."Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate".CRYSTALS 13.1(2023).