中文版 | English
Title

Transformation Toughening in Solid Dielectrics

Author
Corresponding AuthorZhu, Chaoqiong; Tian, Zhaobo; Feng, Peizhong
Publication Years
2023
DOI
Source Title
EISSN
2637-6113
Abstract
High breakdown-resistant solid dielectrics are necessary in almost all kinds of dielectric systems, such as dielectric energy-storage devices, piezoelectric actuators, electrocaloric devices, and dielectric capacitors. However, the low breakdown strength of solid dielectrics, especially ceramic dielectrics, is the main obstacle limiting their practical applications. Inspired by the transformation toughening in brittle materials, an approach to enhance the breakdown strength of solid dielectrics is proposed in this work, and the internal mechanism is studied via a phase-field breakdown model. Simulation results indicate that the phase transformation has a significant effect on the dielectric breakdown strength, especially when the critical electric fields for the phase transformation and breakdown are comparable. Compared to dielectrics without phase transformation, the dielectric breakdown strength is nearly doubled when the phase transformation occurs during the breakdown process. Therefore, a reasonable design of phase-transformed dielectrics is expected to be an effective way to achieve the high breakdown resistance.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Corresponding
Funding Project
National Natural Science Foundation of China["52202153","52002208"] ; Fundamen-tal Research Funds for the Central Universities[2021QN1113] ; State Key Laboratory of New Ceramic and Fine Processing Tsinghua University["KF202204","KFZD202002"]
WOS Research Area
Engineering ; Materials Science
WOS Subject
Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000924995200001
Publisher
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/479592
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.China Univ Min & Technol, Sch Mat Sci & Phys, Xuzhou 221116, Peoples R China
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
Corresponding Author AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Cai, Ziming,Zhu, Chaoqiong,Li, Shiheng,et al. Transformation Toughening in Solid Dielectrics[J]. ACS APPLIED ELECTRONIC MATERIALS,2023.
APA
Cai, Ziming.,Zhu, Chaoqiong.,Li, Shiheng.,Yang, Hang.,Li, Aoyu.,...&Feng, Peizhong.(2023).Transformation Toughening in Solid Dielectrics.ACS APPLIED ELECTRONIC MATERIALS.
MLA
Cai, Ziming,et al."Transformation Toughening in Solid Dielectrics".ACS APPLIED ELECTRONIC MATERIALS (2023).
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