Vertical organic electrochemical transistors for complementary circuits

Huang, Wei1,2,3; Chen, Jianhua2,3,4,5,6; Yao, Yao2,3,7,8; Zheng, Ding2,3; Ji, Xudong9; Feng, Liang-Wen2,3,10; Moore, David11; Glavin, Nicholas R.; Xie, Miao1; Chen, Yao2,3; Pankow, Robert M.2,3; Surendran, Abhijith9; Wang, Zhi2,3,12; Xia, Yu13; Bai, Libing1; Rivnay, Jonathan9; Ping, Jianfeng7,8; Guo, Xugang5,6; Cheng, Yuhua1; Marks, Tobin J.2,3; Facchetti, Antonio2,3,13

2023-01-19

10.1038/s41586-022-05592-2

NATURE   Impact Factor & Quartile

0028-0836

1476-4687

Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages (< 1 V), low power consumption (< 1 mu W), high transconductances (> 10 mS) and biocompatibility(1-5). However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance(6-8). Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending redox-active semiconducting polymers with a redox-inactive photocurable and/or photopatternable polymer to form an ion-permeable semiconducting channel, implemented in a simple, scalable vertical architecture that has a dense, impermeable top contact. Footprint current densities exceeding 1 kA cm(-2) at less than +/- 0.7 V, transconductances of 0.2-0.4 S, short transient times of less than 1 ms and ultra-stable switching (> 50,000 cycles) are achieved in, to our knowledge, the first vertically stacked complementary vertical OECT logic circuits. This architecture opens many possibilities for fundamental studies of organic semiconductor redox chemistry and physics in nanoscopically confined spaces, without macroscopic electrolyte contact, as well as wearable and implantable device applications.

SCI

English

NI Journal Papers

Others

AFOSR["FA9550-23RXCOR011","FA9550-22-1-0423","NSF DMR-1720139"] ; Northwestern University MRSEC[DMR-1720139] ; US Department of Commerce, National Institute of Standards and Technology as part of the Center for Hierarchical Materials Design (CHiMaD)[U1830207] ; National Natural Science Foundation of China["21774055","62273073","2022YFE0134800"] ; National Key R&D Program of China[2022NSFSC0877] ; Sichuan Science and Technology Program[NSF ECCS-2025633] ; Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource[DE-AC02-06CH11357] ; US DOE[FA9550-18-1-0320] ; null[70NANB19H005]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000922739000002

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Web of Science

1.Univ Elect Sci & Technol China UESTC, Sch Automat Engn, Chengdu, Peoples R China
2.Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
3.Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
4.Yunnan Univ, Dept Chem Sci & Technol, Kunming, Peoples R China
5.Southern Univ Sci & Technol SUSTech, Dept Mat Sci & Engn, Shenzhen, Peoples R China
6.Southern Univ Sci & Technol SUSTech, Shenzhen Key Lab Printed Organ Elect, Shenzhen, Peoples R China
7.Zhejiang Univ, Sch Biosyst Engn & Food Sci, Hangzhou, Peoples R China
8.ZJU Hangzhou Global Sci & Technol Innovat Ctr, Innovat Platform Micro Nano Technol Biosensing, Hangzhou, Peoples R China
9.Northwestern Univ, Dept Biomed Engn, Evanston, IL USA
10.Sichuan Univ, Coll Chem, Chengdu, Peoples R China
11.Air Force Res Lab, Mat & Mfg DirectorateWPAFB, Wright Patterson AFB, OH USA
12.North Univ China, Sch Mat Sci & Engn, Taiyuan, Peoples R China
13.Flexterra Inc, 8025 Lamon Ave, Skokie, IL USA

Huang, Wei,Chen, Jianhua,Yao, Yao,et al. Vertical organic electrochemical transistors for complementary circuits[J]. NATURE,2023,613(7944).

Huang, Wei.,Chen, Jianhua.,Yao, Yao.,Zheng, Ding.,Ji, Xudong.,...&Facchetti, Antonio.(2023).Vertical organic electrochemical transistors for complementary circuits.NATURE,613(7944).

Huang, Wei,et al."Vertical organic electrochemical transistors for complementary circuits".NATURE 613.7944(2023).