中文版 | English
Title

Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

Author
Corresponding AuthorLiu, Qihang; Lu, Hai-Zhou
Publication Years
2022-06-22
DOI
Source Title
EISSN
2331-8422
Abstract
The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi2Te4 thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.
© 2022, CC BY.
Indexed By
Language
English
SUSTech Authorship
First ; Corresponding
Publisher
EI Accession Number
20220214293
EI Keywords
Antiferromagnetic materials ; Antiferromagnetism ; Bismuth compounds ; Electric fields ; Hall effect ; Manganese compounds ; Tellurium compounds
ESI Classification Code
Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Agricultural Products:821.4
Data Source
EV Compendex
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/497512
DepartmentDepartment of Physics
量子科学与工程研究院
Affiliation
1.Shenzhen Institute for Quantum Science and Engineering, Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China
2.International Quantum Academy, Shenzhen; 518048, China
3.Institute for Theoretical Physics and Astrophysics, University of Würzburg, Wurzburg; 97074, Germany
4.School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning; 437100, China
5.Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen; 518055, China
6.Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen; 518055, China
7.International Center for Quantum Materials, School of Physics, Peking University, Beijing; 100871, China
8.Collaborative Innovation Center of Quantum Matter, Beijing; 100871, China
9.CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing; 100190, China
First Author AffilicationDepartment of Physics;  Institute for Quantum Science and Engineering
Corresponding Author AffilicationDepartment of Physics;  Institute for Quantum Science and Engineering;  Southern University of Science and Technology
First Author's First AffilicationDepartment of Physics;  Institute for Quantum Science and Engineering
Recommended Citation
GB/T 7714
Chen, Rui,Sun, Hai-Peng,Gu, Mingqiang,et al. Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators[J]. arXiv,2022.
APA
Chen, Rui.,Sun, Hai-Peng.,Gu, Mingqiang.,Hua, Chun-Bo.,Liu, Qihang.,...&Xie, X.C..(2022).Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators.arXiv.
MLA
Chen, Rui,et al."Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators".arXiv (2022).
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