Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off

Meng Zhang1; Yamin Zhang1; Baikui Li2; Shiwei Feng1; Mengyuan Hua3; Xi Tang4; Jin Wei5; Kevin J. Chen6

2023

10.1109/JEDS.2023.3259639

IEEE Journal of the Electron Devices Society   Impact Factor & Quartile

2168-6734

SiC IGBT oxide shield on-state voltage drop maximum gate oxide electric field turn-off energy loss

Others

IEEE

1.College of Microelectronics, Beijing University of Technology, Beijing, China
2.College of Physics and Optoelectronic Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), Shenzhen University, Shenzhen, China
3.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
4.Institute of Physical Science and Information Technology and the School of Electrical Engineering and Automation, Anhui University, Hefei, China
5.Institute of Microelectronics, Peking University, Beijing, China
6.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, Hong Kong

Meng Zhang,Yamin Zhang,Baikui Li,et al. Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off[J]. IEEE Journal of the Electron Devices Society,2023,PP(99):1-1.

Meng Zhang.,Yamin Zhang.,Baikui Li.,Shiwei Feng.,Mengyuan Hua.,...&Kevin J. Chen.(2023).Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off.IEEE Journal of the Electron Devices Society,PP(99),1-1.

Meng Zhang,et al."Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off".IEEE Journal of the Electron Devices Society PP.99(2023):1-1.