中文版 | English
Title

Size-Independent Current Density-Voltage Characteristic of Micro-LEDs

Author
DOI
Publication Years
2023
Conference Name
19th China International Forum on Solid State Lighting / 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA) (IFWS)
ISBN
979-8-3503-4639-8
Source Title
Pages
305-307
Conference Date
7-10 Feb. 2023
Conference Place
Suzhou, China
Publication Place
345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher
Abstract
Various individual Micro-LEDs were designed and fabricated with size from 10 mu m to 100 mu m. The effects of Size-independent current density-voltage characteristic of Micro-LEDs were investigated. It is found size effect didn't have obvious impact on the J-V characteristics (current density-voltage), because of the optimized current route of the current spreading layer. Meanwhile, the device leakage current was less than 10(-11) A, while the contact resistance between p-GaN and contact metal is 5.9E-3 ohm center dot cm(2). The forward voltage is 2.36V with the current density of 10 A/cm(2), and external quantum efficiency is 13.6%.
Keywords
SUSTech Authorship
First
Language
English
URL[Source Record]
Indexed By
WOS Research Area
Engineering
WOS Subject
Engineering, Electrical & Electronic
WOS Accession No
WOS:000982300900077
Data Source
IEEE
PDF urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10070937
Citation statistics
Cited Times [WOS]:0
Document TypeConference paper
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/519622
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
First Author AffilicationDepartment of Electrical and Electronic Engineering
First Author's First AffilicationDepartment of Electrical and Electronic Engineering
Recommended Citation
GB/T 7714
Hang Yang,Wen-Jun Huang,Yong-Hong Lin,et al. Size-Independent Current Density-Voltage Characteristic of Micro-LEDs[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2023:305-307.
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