中文版 | English
Title

Uplimit (ZT)max and effective merit parameter B* of thermoelectric semiconductors

Author
Corresponding AuthorLiu, Weishu; Zhang, Wenqing
Publication Years
2023-02
DOI
Source Title
EISSN
2542-5293
Volume31
Abstract
Thermoelectric materials directly convert thermal energy and electrical power, attracting wide attention. New materials and new strategies to pursue a high ZT value mark the progress of thermoelectric materials. However, the critical factors relative to a given material's uplimit (ZT)max in the dual-parameter space of temperature carrier concentration are still an open question. In this work, we theoretically show that (ZT)max has a proximately linear relationship with B* that connects the weighted mobility, lattice thermal conductivity, and the bandgap in a single parameter. We also provide insight discussion for achieving a high B* by pursuing high U*, large Eg, and low κlat, or breaking the connections among κlat versus U*, Eg versus κlat, U* versus Eg, suggesting that B* is a good primary effective merit parameter for quick screening new thermoelectric materials.

© 2023

Indexed By
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
The work was supported the National Natural Science Foundation of China ( 51872133 ), Shenzhen Key Program for Long-Term Academic Support Plan ( 20200925164021002 ), W.L. acknowledges the support from the Tencent Foundation through the XPLORER PRIZE.The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Weishu Liu reports financial support was provided by National Natural Science Foundation of China. Weishu Liu reports financial support was provided by Shenzhen Key Program for Long-Term Academic Support Plan.The work was supported the National Natural Science Foundation of China (51872133), Shenzhen Key Program for Long-Term Academic Support Plan (20200925164021002), W.L. acknowledges the support from the Tencent Foundation through the XPLORER PRIZE.
Publisher
EI Accession Number
20230513458247
EI Keywords
Carrier Mobility ; Thermal Conductivity ; Thermoelectric Equipment ; Thermoelectricity
ESI Classification Code
Thermoelectric Energy:615.4 ; Thermodynamics:641.1 ; Electricity: Basic Concepts And Phenomena:701.1 ; Semiconducting Materials:712.1
Data Source
EV Compendex
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/519642
DepartmentDepartment of Materials Science and Engineering
Affiliation
1.Department of Materials Science and Engineering, Southern University of Science and Technology, No.1088 Xueyuan Blvd, Shenzhen; 518055, China
2.Materials Genome Institute, Shanghai University, No. 99 Shangda Road, Shanghai; 200444, China
3.School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing; 10083, China
First Author AffilicationDepartment of Materials Science and Engineering
Corresponding Author AffilicationDepartment of Materials Science and Engineering
First Author's First AffilicationDepartment of Materials Science and Engineering
Recommended Citation
GB/T 7714
Liu, Weishu,Han, Zhijia,Ji, Jialin,et al. Uplimit (ZT)max and effective merit parameter B* of thermoelectric semiconductors[J]. Materials Today Physics,2023,31.
APA
Liu, Weishu,Han, Zhijia,Ji, Jialin,Feng, Tao,Yang, Jiong,&Zhang, Wenqing.(2023).Uplimit (ZT)max and effective merit parameter B* of thermoelectric semiconductors.Materials Today Physics,31.
MLA
Liu, Weishu,et al."Uplimit (ZT)max and effective merit parameter B* of thermoelectric semiconductors".Materials Today Physics 31(2023).
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