Title | Magnetoresistance signature of two-dimensional electronic states in Co3Sn2 S2 |
Author | |
Publication Years | 2023-02-15
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DOI | |
Source Title | |
ISSN | 2469-9950
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EISSN | 2469-9969
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Volume | 107 |
Abstract | Two-dimensional (2D) Dirac bands and flat bands are characteristics of a kagome lattice. However, experimental studies on their electrical transport are few, because three-dimensional (3D) bulk bands of kagome materials, consisting of stacked 2D kagome layers, dominate the transport. We report a magnetoresistance (MR) study of a kagome material, Co3Sn2S2. Based on analysis of the temperature, magnetic field, and field angle dependence of the resistivity, we obtain a complete anatomy of MR. Besides a magnon MR, a chirality-dependent MR, and a chiral-anomaly-induced MR, the most intriguing feature is an orbital MR that scales only with the out-of-plane field, which strongly indicates its 2D nature. We attribute it to the Dirac band of the kagome lattice. © 2023 American Physical Society. |
Indexed By | |
Language | English
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SUSTech Authorship | Others
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Funding Project | This work was supported by National Key Basic Research Program of China (Grants No. 2022YFA1403700, No. 2020YFA0308800, and No. 2022YFA1403800) and NSFC (Projects No. 12074009, No. 11774009, and No. 12204520). Zhilin Li is grateful for the support from the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021008).
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Publisher | |
EI Accession Number | 20230813614873
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EI Keywords | Binary alloys
; Cobalt alloys
; Tin alloys
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ESI Classification Code | Tin and Alloys:546.2
; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Magnetism: Basic Concepts and Phenomena:701.2
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Data Source | EV Compendex
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/519676 |
Department | Department of Physics 量子科学与工程研究院 |
Affiliation | 1.State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing; 100871, China 2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing; 100190, China 3.Collaborative Innovation Center of Quantum Matter, Beijing; 100871, China 4.Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China 5.Peking University Yangtze Delta Institute of Optoelectronics, Jiangsu, Nantong; 226010, China |
Recommended Citation GB/T 7714 |
Zhao, Jiaji,Jiang, Bingyan,Zhang, Shen,et al. Magnetoresistance signature of two-dimensional electronic states in Co3Sn2 S2[J]. Physical Review B,2023,107.
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APA |
Zhao, Jiaji.,Jiang, Bingyan.,Zhang, Shen.,Wang, Lujunyu.,Liu, Enke.,...&Wu, Xiaosong.(2023).Magnetoresistance signature of two-dimensional electronic states in Co3Sn2 S2.Physical Review B,107.
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MLA |
Zhao, Jiaji,et al."Magnetoresistance signature of two-dimensional electronic states in Co3Sn2 S2".Physical Review B 107(2023).
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