中文版 | English
Title

Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6

Author
Publication Years
2023-01-15
DOI
Source Title
ISSN
2469-9950
EISSN
2469-9969
Volume107
Abstract
The exchange bias effect, namely the horizontal shift in the magnetic hysteretic loop, is known as a fundamentally and technologically important property of magnetic systems. Though the exchange bias effect has been widely observed in normal magnetic heterostructure, it is desirable to raise such pinning coupling in topology-based multilayer structure. Furthermore, the exchange bias effect was theoretically proposed to be able to further open the surface magnetization gap in the recently discovered intrinsic magnetic topological insulator MnBi2Te4. Such an exchange interaction can be ensured and programmed in the heterojunction, or applied to spintronics. Here we report the electrically tunable exchange bias in the van der Waals MnBi2Te4/Cr2Ge2Te6 heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the band gap. Moreover, the exchange bias is experienced by net ferromagnetic (FM) odd-layers MnBi2Te4 rather than the pure FM insulator Cr2Ge2Te6. Accompanied by nonlocal signal, an unfamiliar antisymmetric peak endows a domain-related structure within interface of the heterostructure. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible application of spintronics or high-Tc quantum anomalous Hall effect.
© 2023 American Physical Society.
Indexed By
EI ; SCI
Language
English
SUSTech Authorship
Others
Funding Project
This work was supported by National Natural Science Foundation of China (Grants No. 12004158, No. 12074162, No. 91964201, No. 61825401, No. 62125404, and No. 11774004), National Key Research and Development Program of China (Grants No. 2020YFA0309300, No. 2018YFA0703703 and No. 2020YFB1506400), Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022B1515130005), the Key-Area Research and Development Program of Guangdong Province (Grant No. 2018B030327001), Guangdong Provincial Key Laboratory (Grant No. 2019B121203002), Hefei National Laboratory (2021ZD0303001), and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000).
WOS Accession No
WOS:000925846100001
Publisher
EI Accession Number
20230513457400
EI Keywords
Bismuth compounds ; Chromium compounds ; Energy gap ; Germanium compounds ; Manganese compounds ; Quantum Hall effect ; Spin Hall effect ; Tellurium compounds ; Van der Waals forces
ESI Classification Code
Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Classical Physics; Quantum Theory; Relativity:931 ; Atomic and Molecular Physics:931.3
Data Source
EV Compendex
Citation statistics
Cited Times [WOS]:1
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/519725
DepartmentDepartment of Physics
量子科学与工程研究院
Affiliation
1.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
2.Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
4.State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing; 100871, China
5.International Quantum Academy, Shenzhen; 518048, China
6.Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
7.Department of Physics, Beijing Normal University, Beijing; 100875, China
8.Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing; 100083, China
First Author AffilicationDepartment of Physics;  Institute for Quantum Science and Engineering
Recommended Citation
GB/T 7714
Fang, Jing-Zhi,Cui, Hao-Nan,Wang, Shuo,et al. Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6[J]. Physical Review B,2023,107.
APA
Fang, Jing-Zhi.,Cui, Hao-Nan.,Wang, Shuo.,Lu, Jing-Di.,Zhu, Guang-Yu.,...&Yu, Dapeng.(2023).Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6.Physical Review B,107.
MLA
Fang, Jing-Zhi,et al."Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6".Physical Review B 107(2023).
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