Title | Charge instability of topological Fermi arcs in chiral crystal CoSi |
Author | Rao, Zhicheng1,2,3; Hu, Quanxin1,3; Tian, Shangjie4,5; Qu, Qing2 ![]() ![]() ![]() ![]() ![]() |
Corresponding Author | Xu, Jinpeng |
Publication Years | 2023-01-30
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DOI | |
Source Title | |
ISSN | 2095-9273
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EISSN | 2095-9281
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Volume | 68Pages:165-172 |
Abstract | Topological boundary states emerged at the spatial boundary between topological non-trivial and trivial phases, are usually gapless, or commonly referred as metallic states. For example, the surface state of a topological insulator is a gapless Dirac state. These metallic topological boundary states are typically well described by non-interacting fermions. However, the behavior of topological boundary states with significant electron–electron interactions, which could turn the gapless boundary states into gapped ordered states, e.g., density wave states or superconducting states, is of great interest theoretically, but is still lacking evidence experimentally. Here, we report the observation of incommensurable charge density wave (CDW) formed on the topological boundary states driven by the electron–electron interactions on the (0 0 1) surface of CoSi. The wavevector of CDW varies as the temperature changes, which coincides with the evolution of topological surface Fermi arcs with temperature. The orientation of the CDW phase is determined by the chirality of the Fermi arcs, which indicates a direct association between CDW and Fermi arcs. Our finding will stimulate the search of more interactions-driven ordered states, such as superconductivity and magnetism, on the boundaries of topological materials. © 2023 Science China Press |
Indexed By | |
Language | English
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SUSTech Authorship | Others
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Funding Project | We thank Lu Yu, Chen Fang, Tiantian Zhang and Liqing Zhou for valuable discussions. We thank the technical support from Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO). This work was supported by the National Natural Science Foundation of China ( U1832202 , 11888101 , 11920101005 , 12141402 , and 12274459 ), the Chinese Academy of Sciences ( QYZDB-SSW-SLH043 , XDB33020100 , and XDB28000000 ), the Beijing Municipal Science and Technology Commission ( Z171100002017018 , and Z200005 ), the National Key R&D Program of China ( 2018YFE0202600, 2022YFA1403100, and 2022YFA1403800 ), the Fundamental Research Funds for the Central Universities and Research Funds of Renmin University of China (RUC) ( 18XNLG14 , 19XNLG13 , 19XNLG17 , and 20XNH062 ), the Synergic Extreme Condition User Facility, Beijing, China, and Beijing National Laboratory for Condensed Matter Physics.We thank Lu Yu, Chen Fang, Tiantian Zhang, and Liqing Zhou for valuable discussions. We thank the technical support from Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO). This work was supported by the National Natural Science Foundation of China (U1832202, 11888101, 11920101005, 12141402, and 12274459), the Chinese Academy of Sciences (QYZDB-SSW-SLH043, XDB33020100, and XDB28000000), the Beijing Municipal Science and Technology Commission (Z171100002017018, and Z200005), the National Key R&D Program of China (2018YFE0202600, 2022YFA1403100, and 2022YFA1403800), the Fundamental Research Funds for the Central Universities and Research Funds of Renmin University of China (RUC) (18XNLG14, 19XNLG13, 19XNLG17, and 20XNH062), the Synergic Extreme Condition User Facility, Beijing, China, and Beijing National Laboratory for Condensed Matter Physics. Zhicheng Rao, Quanxin Hu, Jinpeng Xu, and Yu-Jie Sun designed STM measurements; Quanxin Hu, Zhicheng Rao, Jinpeng Xu, and Congrun Chen performed STM measurements with assistance of Zhenyu Yuan, Renjie Zhang, Li Wang, and Fangsen Li; Zhicheng Rao performed ARPES measurements with assistance of Shunye Gao, Quanxin Hu, Jierui Huang, Wenhui Fan, and Yaobo Huang; Zhicheng Rao, Quanxin Hu, Congrun Chen, and Qing Qu processed sample surface with assistance from Jierui Huang and Cenyao Tang; Li Wang and Huaixin Yang performed TEM measurements; Shangjie Tian and Hechang Lei synthesized single crystals; Zhicheng Rao and Quanxin Hu analysed experimental data; Zhicheng Rao and Yu-Jie Sun plotted figures with assistance from Kun Jiang and Tian Qian; Zhicheng Rao, Qing Qu, Yu-Jie Sun, Kun Jiang, and Hong Ding wrote the manuscript with contributions from all authors; Yu-Jie Sun, Kedong Wang, and Hong Ding supervised the project.
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WOS Accession No | WOS:000945908000001
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Publisher | |
EI Accession Number | 20230313404289
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EI Keywords | Association reactions
; Charge density
; Crystals
; Electrons
; Topological insulators
; Topology
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ESI Classification Code | Electricity: Basic Concepts and Phenomena:701.1
; Chemical Reactions:802.2
; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
; Crystalline Solids:933.1
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Data Source | EV Compendex
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/519726 |
Department | Department of Physics |
Affiliation | 1.Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing; 100190, China 2.Department of Physics, Southern University of Science and Technology, Shenzhen; 518055, China 3.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing; 100049, China 4.School of Materials Science and Engineering, Anhui University, Hefei; 230601, China 5.Laboratory for Neutron Scattering, and Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing; 100872, China 6.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201204, China 7.Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou; 215123, China 8.Songshan Lake Materials Laboratory, Dongguan; 523808, China 9.CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing; 100190, China |
First Author Affilication | Department of Physics |
Recommended Citation GB/T 7714 |
Rao, Zhicheng,Hu, Quanxin,Tian, Shangjie,et al. Charge instability of topological Fermi arcs in chiral crystal CoSi[J]. Science Bulletin,2023,68:165-172.
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APA |
Rao, Zhicheng.,Hu, Quanxin.,Tian, Shangjie.,Qu, Qing.,Chen, Congrun.,...&Ding, Hong.(2023).Charge instability of topological Fermi arcs in chiral crystal CoSi.Science Bulletin,68,165-172.
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MLA |
Rao, Zhicheng,et al."Charge instability of topological Fermi arcs in chiral crystal CoSi".Science Bulletin 68(2023):165-172.
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