| Title | Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine |
| Author | |
| Corresponding Author | Liu, Pai; Samuelson, Lars; Sun, Xiao Wei |
| Publication Years | 2022
|
| DOI | |
| Source Title | |
| ISSN | 1944-8244
|
| EISSN | 1944-8252
|
| Volume | 15Issue:11Pages:1619-1628 |
| Abstract | InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)3P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPOx defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m-2 to 3.5% and 2355 cd·m-2, respectively.
© ACS Applied Materials and Interfaces. All rights reserved. |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | The authors acknowledge the assistance of SUSTech Core Research Facilities. This work was supported by the Ministry of Science and Technology of China (nos. 2022YFB3602903, 2016YFB0401702, and 2017YFE0120400), the National Natural Science Foundation of China (nos. 61875082, 61405089, 62005115, 62204107, and 12204229), the Key-Area Research and Development Program of Guangdong Province (nos. 2019B010925001, 2019B010924001), and the Shenzhen Key Laboratory for Advanced QD Displays and Lighting (no. ZDSYS201707281632549).
|
| WOS Accession No | WOS:000906484700001
|
| Publisher | |
| EI Accession Number | 20230113337270
|
| EI Keywords | Cadmium Compounds
; Defects
; III-V Semiconductors
; Interface States
; Nanocrystals
; Organic Light Emitting Diodes (OLED)
; Oxidation
; Quantum Efficiency
; Semiconducting Indium Phosphide
; Semiconductor Quantum Dots
|
| ESI Classification Code | Semiconducting Materials:712.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices And Integrated Circuits:714.2
; Nanotechnology:761
; Chemical Reactions:802.2
; Inorganic Compounds:804.2
; Classical Physics
; Quantum Theory
; Relativity:931
; Quantum Theory
; Quantum Mechanics:931.4
; High Energy Physics
; Nuclear Physics
; Plasma Physics:932
; Crystalline Solids:933.1
; Materials Science:951
|
| Data Source | EV Compendex
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/519749 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China 2.Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen; 518055, China 3.Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen; 518055, China 4.Hainan Provincial Key Laboratory of Fine Chemicals, Hainan University, Haikou; 570228, China 5.Department of Materials Science and Engineering, Centre for Functional Photonics (CFP), City University of Hong Kong, 999077, Hong Kong 6.Solid State Physics and NanoLund, Lund University, Lund; 22100, Sweden |
| First Author Affilication | Department of Electrical and Electronic Engineering; Southern University of Science and Technology; |
| Corresponding Author Affilication | Department of Electrical and Electronic Engineering; Southern University of Science and Technology; |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Duan, Xijian,Ma, Jingrui,Zhang, Wenda,et al. Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine[J]. ACS Applied Materials & Interfaces,2022,15(11):1619-1628.
|
| APA |
Duan, Xijian.,Ma, Jingrui.,Zhang, Wenda.,Liu, Pai.,Liu, Haochen.,...&Sun, Xiao Wei.(2022).Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine.ACS Applied Materials & Interfaces,15(11),1619-1628.
|
| MLA |
Duan, Xijian,et al."Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine".ACS Applied Materials & Interfaces 15.11(2022):1619-1628.
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