High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse

Tang, Mingkai1,2; Dai, Liyufen1,2; Cheng, Mingqiang3,4; Zhang, Yuan2,3,4; Wang, Yanghe3,4; Zhong, Xiangli1; Wang, Jinbin1; An, Feng2; Ma, Ming2; Huang, Mingqiang2; Li, Changjian3,4; Li, Jiangyu2,3,4; Zhong, Gaokuo2

2023-03-01

10.1002/adfm.202213874

ADVANCED FUNCTIONAL MATERIALS   Impact Factor & Quartile

1616-301X

1616-3028

The functionalities and applications of oxide thin films are highly dependent on their thickness. Most thickness-dependent studies on oxide thin films require the preparation of independent samples, which is labor-intensive and time-consuming and inevitably introduces experimental errors. To address this challenge, a general strategy based on high-throughput pulsed laser deposition technology is proposed to precisely control the thin-film thickness in local regions under similar growth conditions. The as-proposed synthesis strategy is demonstrated using typical complex oxide materials of SrTiO3 (STO). Consequently, high-throughput STO thin films with nine gradient thicknesses ranging from 10.1 to 30.5 nm are fabricated. Notably, a transition from the unipolar to the bipolar resistive switching mode is observed with increasing STO thickness. Moreover, a physical mechanism based on the heterostructure-mediated redistribution of oxygen vacancies is employed to interpret the transition between the two memristive patterns. The screening of STO thin films with different resistive switching behaviors revealed that the STO thin film with a thickness of 20.3 nm exhibit excellent conductance modulation properties under the application of electrical pulses as well as significant reliability for the emulation of various synaptic functions, rendering it a promising material for artificial neuromorphic computing applications.

high-throughput memristors oxygen vacancies SrTiO3 thin films

SCI

English

Corresponding

National Key Research and Development Program of China[2022YFF0706100] ; National Natural Science Foundation of China["92066102","52103289","12192213","12275230"] ; Shenzhen Science and Technology Program["RCYX20200714114733204","KQTD20170810160424889","JCYJ20200109115219157"] ; Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province[2021B1212040001] ; Guangdong Basic and Applied Basic Research Foundation[2022A1515012434] ; Hunan Provincial Innovation Foundation for Postgraduate[XDCX2022Y083]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000950301200001

WILEY-V C H VERLAG GMBH

MATERIALS SCIENCE

Web of Science

1.Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
2.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
4.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China

Tang, Mingkai,Dai, Liyufen,Cheng, Mingqiang,et al. High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse[J]. ADVANCED FUNCTIONAL MATERIALS,2023.

Tang, Mingkai.,Dai, Liyufen.,Cheng, Mingqiang.,Zhang, Yuan.,Wang, Yanghe.,...&Zhong, Gaokuo.(2023).High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse.ADVANCED FUNCTIONAL MATERIALS.

Tang, Mingkai,et al."High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse".ADVANCED FUNCTIONAL MATERIALS (2023).