中文版 | English
Title

Universal Behavior of Highly Confined Heat Flow in Semiconductor Nanosystems: From Nanomeshes to Metalattices

Author
Corresponding AuthorBeardo, Albert; Knobloch, Joshua L.
Publication Years
2023-03-01
DOI
Source Title
ISSN
1530-6984
EISSN
1530-6992
Abstract
Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity of bulk models, while first-principles calculations are too computationally expensive to model real devices. Here we use extreme ultraviolet beams to study phonon transport dynamics in a 3D nanostructured silicon metalattice with deep nanoscale feature size and observe dramatically reduced thermal conductivity relative to bulk. To explain this behavior, we develop a predictive theory wherein thermal conduction separates into a geometric perme-ability component and an intrinsic viscous contribution, arising from a new and universal effect of nanoscale confinement on phonon flow. Using experiments and atomistic simulations, we show that our theory applies to a general set of highly confined silicon nanosystems, from metalattices, nanomeshes, porous nanowires, to nanowire networks, of great interest for next-generation energy-efficient devices.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
STROBE National Science Foundation Science & Technology Center[DMR-1548924]
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000950334100001
Publisher
ESI Research Field
MATERIALS SCIENCE
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/523919
DepartmentDepartment of Physics
工学院_材料科学与工程系
Affiliation
1.Univ Colorado, Dept Phys, JILA, Boulder, CO 80309 USA
2.Univ Colorado, STROBE NSF Sci & Technol Ctr, Boulder, CO 80309 USA
3.NIST, Boulder, CO 80309 USA
4.Univ Basel, Phys Dept, Klingelbergstr 82, CH-4056 Basel, Switzerland
5.IIT ISM Dhanbad, Dept Phys, Dhanbad 826004, Jharkhand, India
6.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Dept Phys, Shenzhen 518055, Peoples R China
7.Univ Colorado, Dept Mech Engn, Dept Phys, Boulder, CO 80309 USA
Recommended Citation
GB/T 7714
McBennett, Brendan,Beardo, Albert,Nelson, Emma E.,et al. Universal Behavior of Highly Confined Heat Flow in Semiconductor Nanosystems: From Nanomeshes to Metalattices[J]. NANO LETTERS,2023.
APA
McBennett, Brendan.,Beardo, Albert.,Nelson, Emma E..,Abad, Begon.,Frazer, Travis D..,...&Knobloch, Joshua L..(2023).Universal Behavior of Highly Confined Heat Flow in Semiconductor Nanosystems: From Nanomeshes to Metalattices.NANO LETTERS.
MLA
McBennett, Brendan,et al."Universal Behavior of Highly Confined Heat Flow in Semiconductor Nanosystems: From Nanomeshes to Metalattices".NANO LETTERS (2023).
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