| Title | Interfacial contact barrier and charge carrier transport of MoS2/metal(001) heterostructures |
| Author | |
| Corresponding Author | Zhao, Yu-Qing; Jiang, Shaolong |
| Publication Years | 2023-03-01
|
| DOI | |
| Source Title | |
| ISSN | 1463-9076
|
| EISSN | 1463-9084
|
| Abstract | The rapid rise of two-dimensional (2D) materials has aroused increasing interest in the fields of microelectronics and optoelectronics; various types of 2D van der Waals heterostructures (vdWHs), especially those based on MoS2, have been widely investigated in theory and experiment. However, the interfacial properties of MoS2 and the uncommon crystal surface of traditional three-dimensional (3D) metals are yet to be explored. In this paper, we studied heterostructures composed of MoS2 and metal(001) slabs, based on the first-principles calculations, and we uncovered that MoS2/Au(001) and MoS2/Ag(001) vdWHs reveal Schottky contacts, and MoS2/Cu(001) belongs to Ohmic contact and possesses ultrahigh electron tunneling probability at the equilibrium distance. Thus, the MoS2/Cu(001) heterostructure exhibits the best contact performance. Further investigations demonstrate that external longitudinal strain can modulate interfacial contact to engineer the Schottky-Ohmic contact transition and regulate interfacial charge transport. We believe that it is a general strategy to exploit longitudinal strain to improve interfacial contact performance to design and fabricate a multifunctional MoS2-based electronic device. |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | Corresponding
|
| Funding Project | Postgraduate Research Opportunities Program of HZWTECH (HZWTECH-PROP), Initial Scientific Research Fund of Hunan University of Science and Technology[E51996]
; Scientific Research Fund of Hunan Provincial Education Department, China[20B219]
; Hunan Provincial Natural Science Foundation of China[2020JJ5154]
; National Natural Science Foundation of China[12204166]
|
| WOS Research Area | Chemistry
; Physics
|
| WOS Subject | Chemistry, Physical
; Physics, Atomic, Molecular & Chemical
|
| WOS Accession No | WOS:000953424000001
|
| Publisher | |
| ESI Research Field | CHEMISTRY
|
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/523957 |
| Department | Department of Physics |
| Affiliation | 1.Hunan Univ Sci & Technol, Sch Phys & Elect Sci, Xiangtan 411201, Peoples R China 2.Hunan Prov Key Lab Intelligent Sensors & New Senso, Xiangtan 411201, Hunan, Peoples R China 3.Hongzhiwei Technol Shanghai Co Ltd, 1599 Xinjinqiao Rd, Shanghai, Peoples R China 4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China |
| Corresponding Author Affilication | Department of Physics |
| Recommended Citation GB/T 7714 |
Zhang, Zi-Wen,Liu, Zhao-Sheng,Zhang, Jun-Jie,et al. Interfacial contact barrier and charge carrier transport of MoS2/metal(001) heterostructures[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2023.
|
| APA |
Zhang, Zi-Wen.,Liu, Zhao-Sheng.,Zhang, Jun-Jie.,Sun, Bing-Ning.,Zou, Dai-Feng.,...&Jiang, Shaolong.(2023).Interfacial contact barrier and charge carrier transport of MoS2/metal(001) heterostructures.PHYSICAL CHEMISTRY CHEMICAL PHYSICS.
|
| MLA |
Zhang, Zi-Wen,et al."Interfacial contact barrier and charge carrier transport of MoS2/metal(001) heterostructures".PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2023).
|
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