中文版 | English
Title

High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials

Author
Corresponding AuthorLv, Chunyan; Xu, Wangping; Wu, Xiaozhi
Publication Years
2023-03-01
DOI
Source Title
ISSN
1463-9076
EISSN
1463-9084
Abstract
Recently, two-dimensional (2D) layered polarized ZnIn2S4 nanosheets have been successfully synthesized in experiments. However, the polarized monolayers are unstable in air, which hinders their practical applications. Therefore, in this work, we proposed a new family of nonpolarized monolayers (beta(2)-phase) ZnX(2)Z(4) (X = In, Al, and Ga; Z = S, Se, and Te) by first-principles. It is confirmed that the energies of beta(2)-phase ZnX(2)Z(4) are lower than those of the polarized and beta-phase ZnX(2)Z(4) monolayers. Moreover, these ZnX(2)Z(4) monolayers have not only desirable indirect band gaps but also high electron mobility (up to 10(3) cm(2) V-1 s(-1)), revealing a fascinating visible light absorption range. Furthermore, beta(2)-phase ZnX2Te4 (X = In, Al, and Ga) has ultra-low lattice thermal conductivity and high ZT value (up to 0.89), suggesting that these monolayers can be good candidates for thermoelectric materials. These new 2D ternary monolayers not only effectively broaden the family of 2D materials but also provide promising candidates for optoelectronic and thermoelectric materials.
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
Natural Science Foundation of China["12174040","12147102","12204398","52273175"] ; Chongqing Natural Science Foundation[cstc2020jcyj-msxmX0118] ; Education Department of Hunan Province[21C0093] ; Foshan (Southern China) Institute for New Materials[2021A1515110127]
WOS Research Area
Chemistry ; Physics
WOS Subject
Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS Accession No
WOS:000961866500001
Publisher
ESI Research Field
CHEMISTRY
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/523988
DepartmentCenter for Computational Science and Engineering
Affiliation
1.Chongqing Univ, Inst Struct & Funct, Chongqing 401331, Peoples R China
2.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China
3.Huzhou Univ, Dept Mat Chem, Huzhou 313000, Peoples R China
4.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China
5.Southern Univ Sci & Technol, Ctr Computat Sci & Engn, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Shi, Li,Lv, Chunyan,Wei, Haoran,et al. High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2023.
APA
Shi, Li.,Lv, Chunyan.,Wei, Haoran.,Xu, Wangping.,Wang, Rui.,...&Wu, Xiaozhi.(2023).High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials.PHYSICAL CHEMISTRY CHEMICAL PHYSICS.
MLA
Shi, Li,et al."High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials".PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2023).
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