| Title | Magnetic topological transistor exploiting layer-selective transport |
| Author | |
| Corresponding Author | Sun, Hai-Peng |
| Publication Years | 2023-03-14
|
| DOI | |
| Source Title | |
| EISSN | 2643-1564
|
| Volume | 5Issue:1 |
| Abstract | We propose a magnetic topological transistor based on MnBi2Te4, in which the "on" state (quantized conductance) and the "off " state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi2Te4. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off " states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi2Te4. |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | Others
|
| Funding Project | DFG["SPP1666","SFB1170"]
; Worzburg-Dresden Cluster of Excellence ct.qmat["EXC2147","390858490"]
; National Natural Science Foundation of China[11925402]
|
| WOS Research Area | Physics
|
| WOS Subject | Physics, Multidisciplinary
|
| WOS Accession No | WOS:000957749500002
|
| Publisher | |
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/524021 |
| Department | Institute for Quantum Science and Engineering 理学院_物理系 |
| Affiliation | 1.Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany 2.Univ Zurich, Dept Phys, Winterthurerstr 190, CH-8057 Zurich, Switzerland 3.Southern Univ Sci & Technol SUSTech, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China 4.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China 5.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China 6.Wurzburg Dresden Cluster Excellence Ct Qmat, Wurzburg, Germany |
| Recommended Citation GB/T 7714 |
Sun, Hai-Peng,Li, Chang-An,Choi, Sang-Jun,et al. Magnetic topological transistor exploiting layer-selective transport[J]. PHYSICAL REVIEW RESEARCH,2023,5(1).
|
| APA |
Sun, Hai-Peng,Li, Chang-An,Choi, Sang-Jun,Zhang, Song-Bo,Lu, Hai-Zhou,&Trauzettel, Bjorn.(2023).Magnetic topological transistor exploiting layer-selective transport.PHYSICAL REVIEW RESEARCH,5(1).
|
| MLA |
Sun, Hai-Peng,et al."Magnetic topological transistor exploiting layer-selective transport".PHYSICAL REVIEW RESEARCH 5.1(2023).
|
| Files in This Item: | There are no files associated with this item. | |||||
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