中文版 | English
Title

Magnetic topological transistor exploiting layer-selective transport

Author
Corresponding AuthorSun, Hai-Peng
Publication Years
2023-03-14
DOI
Source Title
EISSN
2643-1564
Volume5Issue:1
Abstract
We propose a magnetic topological transistor based on MnBi2Te4, in which the "on" state (quantized conductance) and the "off " state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi2Te4. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off " states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi2Te4.
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
DFG["SPP1666","SFB1170"] ; Worzburg-Dresden Cluster of Excellence ct.qmat["EXC2147","390858490"] ; National Natural Science Foundation of China[11925402]
WOS Research Area
Physics
WOS Subject
Physics, Multidisciplinary
WOS Accession No
WOS:000957749500002
Publisher
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/524021
DepartmentInstitute for Quantum Science and Engineering
理学院_物理系
Affiliation
1.Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
2.Univ Zurich, Dept Phys, Winterthurerstr 190, CH-8057 Zurich, Switzerland
3.Southern Univ Sci & Technol SUSTech, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China
5.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China
6.Wurzburg Dresden Cluster Excellence Ct Qmat, Wurzburg, Germany
Recommended Citation
GB/T 7714
Sun, Hai-Peng,Li, Chang-An,Choi, Sang-Jun,et al. Magnetic topological transistor exploiting layer-selective transport[J]. PHYSICAL REVIEW RESEARCH,2023,5(1).
APA
Sun, Hai-Peng,Li, Chang-An,Choi, Sang-Jun,Zhang, Song-Bo,Lu, Hai-Zhou,&Trauzettel, Bjorn.(2023).Magnetic topological transistor exploiting layer-selective transport.PHYSICAL REVIEW RESEARCH,5(1).
MLA
Sun, Hai-Peng,et al."Magnetic topological transistor exploiting layer-selective transport".PHYSICAL REVIEW RESEARCH 5.1(2023).
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