Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band

Zha, Jiajia1,2; Shi, Shuhui3,4; Chaturvedi, Apoorva; Huang, Haoxin2; Yang, Peng2; Yao, Yao5; Li, Siyuan5; Xia, Yunpeng2; Zhang, Zhuomin6,11; Wang, Wei1; Wang, Huide2; Wang, Shaocong3; Yuan, Zhen7,8; Yang, Zhengbao6,9; He, Qiyuan1; Tai, Huiling7,8; Teo, Edwin Hang Tong10; Yu, Hongyu4; Ho, Johnny C.1; Wang, Zhongrui3; Zhang, Hua5,12; Tan, Chaoliang2,5,12

2023-03-01

10.1002/adma.202211598

ADVANCED MATERIALS   Impact Factor & Quartile

0935-9648

1521-4095

Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.

2D tellurium in-sensor reservoir computing optical communication band optoelectronic memory device van der Waals heterostructures

SCI

English

NI Journal Papers

Others

National Natural Science Foundation of China - Excellent Young Scientists Fund[CityU 21201821] ; City University of Hong Kong["CityU 11200122","27206321","AoE/P-701/20"] ; ECS scheme[JCYJ20200109143412311] ; null[52122002] ; null[62122004] ; null[9610495] ; null[9680297] ; null[7020013] ; null[9380100] ; null[9680314] ; null[9678272] ; null[1886921]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000960314400001

WILEY-V C H VERLAG GMBH

MATERIALS SCIENCE

Web of Science

1.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China
2.City Univ Hong Kong, Dept Elect Engn, Hong Kong 999077, Peoples R China
3.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong 999077, Peoples R China
4.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China
5.Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
6.City Univ Hong Kong, Dept Chem, Hong Kong 999077, Peoples R China
7.City Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China
8.Univ Elect Sci & Technol China UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
9.Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong 999077, Peoples R China
10.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
11.City Univ Hong Kong, Natl Precious Met Mat Engn Res Ctr NPMM, Hong Kong Branch, Hong Kong, Peoples R China
12.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China

Zha, Jiajia,Shi, Shuhui,Chaturvedi, Apoorva,et al. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band[J]. ADVANCED MATERIALS,2023.

Zha, Jiajia.,Shi, Shuhui.,Chaturvedi, Apoorva.,Huang, Haoxin.,Yang, Peng.,...&Tan, Chaoliang.(2023).Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band.ADVANCED MATERIALS.

Zha, Jiajia,et al."Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band".ADVANCED MATERIALS (2023).