Title | Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band |
Author | Zha, Jiajia1,2; Shi, Shuhui3,4 ![]() ![]() ![]() ![]() ![]() |
Corresponding Author | Wang, Zhongrui; Zhang, Hua; Tan, Chaoliang |
Publication Years | 2023-03-01
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DOI | |
Source Title | |
ISSN | 0935-9648
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EISSN | 1521-4095
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Abstract | Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
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SUSTech Authorship | Others
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Funding Project | National Natural Science Foundation of China - Excellent Young Scientists Fund[CityU 21201821]
; City University of Hong Kong["CityU 11200122","27206321","AoE/P-701/20"]
; ECS scheme[JCYJ20200109143412311]
; null[52122002]
; null[62122004]
; null[9610495]
; null[9680297]
; null[7020013]
; null[9380100]
; null[9680314]
; null[9678272]
; null[1886921]
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WOS Research Area | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
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WOS Subject | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
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WOS Accession No | WOS:000960314400001
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Publisher | |
ESI Research Field | MATERIALS SCIENCE
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Data Source | Web of Science
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/524023 |
Department | SUSTech Institute of Microelectronics |
Affiliation | 1.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China 2.City Univ Hong Kong, Dept Elect Engn, Hong Kong 999077, Peoples R China 3.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong 999077, Peoples R China 4.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China 5.Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore 6.City Univ Hong Kong, Dept Chem, Hong Kong 999077, Peoples R China 7.City Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China 8.Univ Elect Sci & Technol China UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China 9.Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong 999077, Peoples R China 10.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 11.City Univ Hong Kong, Natl Precious Met Mat Engn Res Ctr NPMM, Hong Kong Branch, Hong Kong, Peoples R China 12.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China |
Recommended Citation GB/T 7714 |
Zha, Jiajia,Shi, Shuhui,Chaturvedi, Apoorva,et al. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band[J]. ADVANCED MATERIALS,2023.
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APA |
Zha, Jiajia.,Shi, Shuhui.,Chaturvedi, Apoorva.,Huang, Haoxin.,Yang, Peng.,...&Tan, Chaoliang.(2023).Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band.ADVANCED MATERIALS.
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MLA |
Zha, Jiajia,et al."Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band".ADVANCED MATERIALS (2023).
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