Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect

Tang, Xingyu1; Huang, Yixuan1; Cheng, Keming1; Yuan, Qi1; Zou, Jihua1; Li, Chuang1; Ren, Aobo1; Shen, Kai1; Wang, Zhiming1,2

2023-04-01

10.1016/j.mee.2023.111980

MICROELECTRONIC ENGINEERING   Impact Factor & Quartile

0167-9317

1873-5568

Two-dimensional (2D) materials have attracted an increasing attention in state-of-the-art optical sensing ap-plications. However, the performance of photodetectors based on 2D materials are limited by weak light ab-sorption, resulting in a low optical response. In this work, a highly sensitive and fast photodetector is fabricated based on WSe2/MoSe2 vertical p-n van der Waals heterojunction via an effective photogating effect. Benefiting from the good energy band alignment and photogating effect, a fast separation of photogenerated carriers and high optical gain are obtained. As a result, the photodetector exhibits a high responsivity of 1260 A/W, a specific detectivity of 6.05 x 1012 Jones, a large external quantum efficiency approaching 2.68 x 105%, and a short response time of 3.5 ms. This work provided a facile strategy for improving the device performance to meeting the increasing demand of highly sensitive light sensing devices.

WSe 2 MoSe 2 heterojunction Photogating effect Highly sensitive photodetector

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English

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National Key Research and Development Program of China[2021YFA1401100] ; National Natural Science Foundation of China[52202165] ; Innovation Group Project of Sichuan Province[20CXTD0090] ; Fundamental Research Funds for the Central Universities[ZYGX2019Z018] ; UESTC Shared Research Facilities of Electromagnetic Wave and Matter Interaction[Y0301901290100201] ; Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province[2021ZYD0023] ; Natural Science Foundation of Sichuan Province[2022NSFSC0918]

Engineering ; Science & Technology - Other Topics ; Optics ; Physics

Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied

WOS:000957049400001

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ENGINEERING

Web of Science

1.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China

Tang, Xingyu,Huang, Yixuan,Cheng, Keming,et al. Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect[J]. MICROELECTRONIC ENGINEERING,2023,274.

Tang, Xingyu.,Huang, Yixuan.,Cheng, Keming.,Yuan, Qi.,Zou, Jihua.,...&Wang, Zhiming.(2023).Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect.MICROELECTRONIC ENGINEERING,274.

Tang, Xingyu,et al."Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect".MICROELECTRONIC ENGINEERING 274(2023).