Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector
A tailored interface located at the buried perovskite heterojunction is often employed to ameliorate the performance and reliability of n-i-p plane structure perovskite photovoltaic devices. Refinements of interfacial properties such as energy band alignment, surface defects passivation and lattice matching ensure efficient extraction and transport of photogenerated charge carriers. Here, we demonstrated that the phenethylammonium iodide (PEAI) is employed to regulate the tin oxide (SnO)/perovskite interface. Incorporating PEAI into SnO can passivate crystallographic defects and realign the energy band, thereby contributing to high electronic mobility of electron selective layers (ESLs) and electron extraction rate optimization at the buried perovskite heterojunction interface. Additionally, the charge carrier non-radiative recombination of perovskites based on PEAI- modified SnO is also suppressed due to the augmentation of perovskite crystallinity induced by the hydrophobicity of the ESL film. Meanwhile, theoretical calculations verified the intrinsic mechanism that the formed N-O bond interaction facilitates charge transfer at the SnO/perovskite interface. Consequently, metal halide perovskite photodetector (PPD) based on PEAI-modified SnO achieved a decent specific detectivity of 2.57 × 10 Jones (1 Jones = 1 cm Hz W), a responsivity of 0.40 A/W and an extensive linear dynamic range of 161 dB with self-powered mode. The unencapsulated PPD with PEAI-modified SnO ESL maintains over 75% of the initial photoresponse after 30 days in the atmospheric environment.
National Key Research and Development Program of China[2017YFA0700202];National Key Research and Development Program of China[2021YFB2800703];National Natural Science Foundation of China[U22A2008];
|WOS Research Area|
Chemistry ; Materials Science ; Physics
Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
|WOS Accession No|
|ESI Research Field|
Cited Times [WOS]:3
|Document Type||Journal Article|
|Department||Department of Electrical and Electronic Engineering|
1.Key Laboratory of Opto-Electronics Information Technology,Ministry of Education,School of Precision Instruments and Opto-Electronics Engineering,Tianjin University,Tianjin,300072,China
2.School of Electrical Engineering,North China University of Water Resources and Electric Power,Zhengzhou,450045,China
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
Wang，Silei,Li，Mengyao,Song，Chunyu,et al. Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector[J]. Applied Surface Science,2023,623.
Wang，Silei.,Li，Mengyao.,Song，Chunyu.,Zheng，Chenglong.,Li，Jitao.,...&Yao，Jianquan.(2023).Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector.Applied Surface Science,623.
Wang，Silei,et al."Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector".Applied Surface Science 623(2023).
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