中文版 | English
Title

Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector

Author
Corresponding AuthorZhang,Yating
Publication Years
2023-06-30
DOI
Source Title
ISSN
0169-4332
EISSN
1873-5584
Volume623
Abstract
A tailored interface located at the buried perovskite heterojunction is often employed to ameliorate the performance and reliability of n-i-p plane structure perovskite photovoltaic devices. Refinements of interfacial properties such as energy band alignment, surface defects passivation and lattice matching ensure efficient extraction and transport of photogenerated charge carriers. Here, we demonstrated that the phenethylammonium iodide (PEAI) is employed to regulate the tin oxide (SnO)/perovskite interface. Incorporating PEAI into SnO can passivate crystallographic defects and realign the energy band, thereby contributing to high electronic mobility of electron selective layers (ESLs) and electron extraction rate optimization at the buried perovskite heterojunction interface. Additionally, the charge carrier non-radiative recombination of perovskites based on PEAI- modified SnO is also suppressed due to the augmentation of perovskite crystallinity induced by the hydrophobicity of the ESL film. Meanwhile, theoretical calculations verified the intrinsic mechanism that the formed N-O bond interaction facilitates charge transfer at the SnO/perovskite interface. Consequently, metal halide perovskite photodetector (PPD) based on PEAI-modified SnO achieved a decent specific detectivity of 2.57 × 10 Jones (1 Jones = 1 cm Hz W), a responsivity of 0.40 A/W and an extensive linear dynamic range of 161 dB with self-powered mode. The unencapsulated PPD with PEAI-modified SnO ESL maintains over 75% of the initial photoresponse after 30 days in the atmospheric environment.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
National Key Research and Development Program of China[2017YFA0700202];National Key Research and Development Program of China[2021YFB2800703];National Natural Science Foundation of China[U22A2008];
WOS Research Area
Chemistry ; Materials Science ; Physics
WOS Subject
Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000965788900001
Publisher
ESI Research Field
MATERIALS SCIENCE
Scopus EID
2-s2.0-85150860331
Data Source
Scopus
Citation statistics
Cited Times [WOS]:3
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/524103
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.Key Laboratory of Opto-Electronics Information Technology,Ministry of Education,School of Precision Instruments and Opto-Electronics Engineering,Tianjin University,Tianjin,300072,China
2.School of Electrical Engineering,North China University of Water Resources and Electric Power,Zhengzhou,450045,China
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
Recommended Citation
GB/T 7714
Wang,Silei,Li,Mengyao,Song,Chunyu,et al. Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector[J]. Applied Surface Science,2023,623.
APA
Wang,Silei.,Li,Mengyao.,Song,Chunyu.,Zheng,Chenglong.,Li,Jitao.,...&Yao,Jianquan.(2023).Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector.Applied Surface Science,623.
MLA
Wang,Silei,et al."Phenethylammonium iodide modulated SnO2 electron selective layer for high performance, self-powered metal halide perovskite photodetector".Applied Surface Science 623(2023).
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