中文版 | English
Title

A study of thermal etching of GaN by atmospheric argon inductively coupled plasma

Author
Corresponding AuthorDeng,Hui
Publication Years
2023-06-01
DOI
Source Title
ISSN
0040-6031
Volume724
Abstract
GaN has a wide application in electronics and optoelectronics due to its excellent electrical properties. The thermal etching process is commonly used in the growth and subsequent process of GaN. As an easy-to-operate technique, atmospheric argon inductively coupled plasma (Ar-ICP) is first applied to the thermal etching of GaN in this study. Through the analysis of surface chemical composition and near-surface plasma spectroscopy, the etching principle and mechanism of the circular etching pit formation are revealed. The maximum material removal rate of Ar-ICP thermal etching can reach 18.72 μm/min. The optical properties of the sliced GaN after the Ar-ICP thermal etching and lapping process are evaluated by photoluminescence (PL), respectively. The PL intensity of the Ar-ICP thermally etched sample increases and the peak position of near-band emission shows a red shift compared to the lapped sample.
Keywords
URL[Source Record]
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
National Natural Science Foundation of China[52005243];National Natural Science Foundation of China[52035009];
ESI Research Field
CHEMISTRY
Scopus EID
2-s2.0-85151007565
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/524126
DepartmentDepartment of Mechanical and Energy Engineering
Affiliation
1.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen, Guangdong,No. 1088, Xueyuan Road,518055,China
2.Department of Physics and Centre for Advanced 2D Materials,Singapore,National University of Singapore, 2 Science Drive 3,117551,Singapore
First Author AffilicationDepartment of Mechanical and Energy Engineering
Corresponding Author AffilicationDepartment of Mechanical and Energy Engineering
First Author's First AffilicationDepartment of Mechanical and Energy Engineering
Recommended Citation
GB/T 7714
Zhang,Linfeng,Zhang,Yongjie,Wu,Bing,et al. A study of thermal etching of GaN by atmospheric argon inductively coupled plasma[J]. Thermochimica Acta,2023,724.
APA
Zhang,Linfeng,Zhang,Yongjie,Wu,Bing,&Deng,Hui.(2023).A study of thermal etching of GaN by atmospheric argon inductively coupled plasma.Thermochimica Acta,724.
MLA
Zhang,Linfeng,et al."A study of thermal etching of GaN by atmospheric argon inductively coupled plasma".Thermochimica Acta 724(2023).
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