Title | Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number |
Author | |
Corresponding Author | Chen,Tingyong; Wang,Rui |
Publication Years | 2023-03-22
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DOI | |
Source Title | |
ISSN | 1530-6984
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EISSN | 1530-6992
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Volume | 23Issue:6Pages:2166-2172 |
Abstract | Here, we propose that Floquet engineering offers a strategy to realize the nonequilibrium quantum anomalous Hall effect (QAHE) with tunable Chern number. Using first-principles calculations and Floquet theorem, we unveil that QAHE related to valley polarization (VP-QAHE) is formed from the hybridization of Floquet sidebands in the two-dimensional family MSiZ (M = Mo, W, V; Z = N, P, As) by irradiating circularly polarized light (CPL). Through the tuning of frequency, intensity, and handedness of CPL, the Chern number of VP-QAHE is highly tunable and up to C = ±4, which attributes to light-induced trigonal warping and multiple-band inversion at different valleys. The chiral edge states and quantized plateau of Hall conductance are visible inside the global band gap, thereby facilitating the experimental measurement. Our work not only establishes Floquet engineering of nonequilibrium VP-QAHE with tunable Chern number in realistic materials but also provides an avenue to explore emergent topological phases under light irradiation. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
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Important Publications | NI Journal Papers
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SUSTech Authorship | Corresponding
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WOS Accession No | WOS:000947901100001
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ESI Research Field | MATERIALS SCIENCE
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Scopus EID | 2-s2.0-85149792694
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Data Source | Scopus
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/524194 |
Department | Center for Computational Science and Engineering |
Affiliation | 1.Institute for Structure and Function,Department of Physics,Chongqing Key Laboratory for Strongly Coupled Physics,Chongqing University,Chongqing,400044,China 2.Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China 3.Shenzhen Insitute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China 4.Center of Quantum Materials and Devices,Chongqing University,Chongqing,400044,China |
Corresponding Author Affilication | Southern University of Science and Technology |
Recommended Citation GB/T 7714 |
Zhan,Fangyang,Zeng,Junjie,Chen,Zhuo,et al. Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number[J]. Nano Letters,2023,23(6):2166-2172.
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APA |
Zhan,Fangyang.,Zeng,Junjie.,Chen,Zhuo.,Jin,Xin.,Fan,Jing.,...&Wang,Rui.(2023).Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number.Nano Letters,23(6),2166-2172.
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MLA |
Zhan,Fangyang,et al."Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number".Nano Letters 23.6(2023):2166-2172.
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