中文版 | English
Title

Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number

Author
Corresponding AuthorChen,Tingyong; Wang,Rui
Publication Years
2023-03-22
DOI
Source Title
ISSN
1530-6984
EISSN
1530-6992
Volume23Issue:6Pages:2166-2172
Abstract
Here, we propose that Floquet engineering offers a strategy to realize the nonequilibrium quantum anomalous Hall effect (QAHE) with tunable Chern number. Using first-principles calculations and Floquet theorem, we unveil that QAHE related to valley polarization (VP-QAHE) is formed from the hybridization of Floquet sidebands in the two-dimensional family MSiZ (M = Mo, W, V; Z = N, P, As) by irradiating circularly polarized light (CPL). Through the tuning of frequency, intensity, and handedness of CPL, the Chern number of VP-QAHE is highly tunable and up to C = ±4, which attributes to light-induced trigonal warping and multiple-band inversion at different valleys. The chiral edge states and quantized plateau of Hall conductance are visible inside the global band gap, thereby facilitating the experimental measurement. Our work not only establishes Floquet engineering of nonequilibrium VP-QAHE with tunable Chern number in realistic materials but also provides an avenue to explore emergent topological phases under light irradiation.
Keywords
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Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Corresponding
WOS Accession No
WOS:000947901100001
ESI Research Field
MATERIALS SCIENCE
Scopus EID
2-s2.0-85149792694
Data Source
Scopus
Citation statistics
Cited Times [WOS]:1
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/524194
DepartmentCenter for Computational Science and Engineering
Affiliation
1.Institute for Structure and Function,Department of Physics,Chongqing Key Laboratory for Strongly Coupled Physics,Chongqing University,Chongqing,400044,China
2.Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Shenzhen Insitute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Center of Quantum Materials and Devices,Chongqing University,Chongqing,400044,China
Corresponding Author AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Zhan,Fangyang,Zeng,Junjie,Chen,Zhuo,et al. Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number[J]. Nano Letters,2023,23(6):2166-2172.
APA
Zhan,Fangyang.,Zeng,Junjie.,Chen,Zhuo.,Jin,Xin.,Fan,Jing.,...&Wang,Rui.(2023).Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number.Nano Letters,23(6),2166-2172.
MLA
Zhan,Fangyang,et al."Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number".Nano Letters 23.6(2023):2166-2172.
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