Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number

Zhan，Fangyang1; Zeng，Junjie1; Chen，Zhuo1; Jin，Xin1; Fan，Jing2; Chen，Tingyong3; Wang，Rui1,4

2023-03-22

10.1021/acs.nanolett.2c04651

Nano Letters   Impact Factor & Quartile

1530-6984

1530-6992

Here, we propose that Floquet engineering offers a strategy to realize the nonequilibrium quantum anomalous Hall effect (QAHE) with tunable Chern number. Using first-principles calculations and Floquet theorem, we unveil that QAHE related to valley polarization (VP-QAHE) is formed from the hybridization of Floquet sidebands in the two-dimensional family MSiZ (M = Mo, W, V; Z = N, P, As) by irradiating circularly polarized light (CPL). Through the tuning of frequency, intensity, and handedness of CPL, the Chern number of VP-QAHE is highly tunable and up to C = ±4, which attributes to light-induced trigonal warping and multiple-band inversion at different valleys. The chiral edge states and quantized plateau of Hall conductance are visible inside the global band gap, thereby facilitating the experimental measurement. Our work not only establishes Floquet engineering of nonequilibrium VP-QAHE with tunable Chern number in realistic materials but also provides an avenue to explore emergent topological phases under light irradiation.

Floquet engineering nonequilibrium states quantum anomalous Hall effect tunable Chern number valleytronics

SCI

English

NI Journal Papers

Corresponding

WOS:000947901100001

MATERIALS SCIENCE

2-s2.0-85149792694

Scopus

1.Institute for Structure and Function,Department of Physics,Chongqing Key Laboratory for Strongly Coupled Physics,Chongqing University,Chongqing,400044,China
2.Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Shenzhen Insitute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Center of Quantum Materials and Devices,Chongqing University,Chongqing,400044,China

Zhan，Fangyang,Zeng，Junjie,Chen，Zhuo,et al. Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number[J]. Nano Letters,2023,23(6):2166-2172.

Zhan，Fangyang.,Zeng，Junjie.,Chen，Zhuo.,Jin，Xin.,Fan，Jing.,...&Wang，Rui.(2023).Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number.Nano Letters,23(6),2166-2172.

Zhan，Fangyang,et al."Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number".Nano Letters 23.6(2023):2166-2172.