中文版 | English
Title

Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

Author
Corresponding AuthorChan,Paddy K.L.
Publication Years
2023
DOI
Source Title
ISSN
0935-9648
EISSN
1521-4095
Abstract
Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C-DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (V) less than 0.5 V, intrinsic mobility higher than 10 cm V s and a subthreshold swing (SS) less than 100 mV dec. The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long-lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high-density OFETs for more advanced electronic or biomedical applications.
Keywords
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Others
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000961346200001
Publisher
ESI Research Field
MATERIALS SCIENCE
Scopus EID
2-s2.0-85152056088
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/524234
DepartmentDepartment of Materials Science and Engineering
Affiliation
1.Department of Mechanical Engineering,The University of Hong Kong,Pokfulam Road,Hong Kong
2.Advanced Biomedical Instrumentation Centre,Hong Kong Science Park,Shatin,Hong Kong
3.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Electrical Engineering,The University of Hong Kong,Pokfulam Road,Hong Kong
Recommended Citation
GB/T 7714
Zou,Deng,He,Zhenfei,Chen,Ming,et al. Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping[J]. Advanced Materials,2023.
APA
Zou,Deng.,He,Zhenfei.,Chen,Ming.,Yan,Lizhi.,Guo,Yifan.,...&Chan,Paddy K.L..(2023).Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping.Advanced Materials.
MLA
Zou,Deng,et al."Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping".Advanced Materials (2023).
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