中文版 | English
Title

Effects of temperature on the deformation of 6H–SiC during nanoscratching

Author
Corresponding AuthorZhang,Liangchi
Publication Years
2023
DOI
Source Title
ISSN
0043-1648
Volume523
Abstract
With the aid of large-scale molecular dynamics simulations, this paper comprehensively investigated the effects of processing temperature on the deformation of single crystal 6H–SiC during nanoscratching. The effect was investigated across a wide range of temperature variations, from 1 K to 900 K. It was found that with increasing the processing temperature, the material removal mechanism of 6H–SiC experience a transition from intermittent cleavage to continuous plastic deformation. The deformation mechanism of 6H–SiC is achieved by the combination of surface amorphization and subsurface dislocations that reside mainly in the cubic diamond structural layer. The processing temperature significantly affects the dislocation distribution, groove morphology, scratching forces and coefficient of friction. The anisotropic effect on chip formation decreases with increasing the processing temperature. By evaluating surface roughness and the maximum subsurface damage depth, the investigation concludes that the scratched surface/subsurface quality of 6H–SiC deteriorates with increasing processing temperature.
Keywords
URL[Source Record]
Language
English
SUSTech Authorship
Corresponding
Funding Project
National Natural Science Foundation of China[52293401];
ESI Research Field
MATERIALS SCIENCE
Scopus EID
2-s2.0-85151686127
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/524255
DepartmentInstitute for Manufacturing Innovation
工学院_力学与航空航天工程系
Affiliation
1.Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology,School of Optics and Photonics,Beijing Institute of Technology,Beijing,100081,China
2.MIIT Key Laboratory of Complex-field Intelligent Exploration,Beijing Institute of Technology,Beijing,100081,China
3.School of Mechanical and Manufacturing Engineering,The University of New South Wales,2052,Australia
4.Shenzhen Key Laboratory of Cross-scale Manufacturing Mechanics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
5.SUSTech Institute for Manufacturing Innovation,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
6.Department of Mechanics and Aerospace Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
7.School of Mechanical and Mining Engineering,The University of Queensland,Brisbane,4072,Australia
8.School of Information and Electronics & Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology,Beijing,100081,China
Corresponding Author AffilicationSouthern University of Science and Technology;  Institute for Manufacturing Innovation;  Department of Mechanics and Aerospace Engineering
Recommended Citation
GB/T 7714
Wu,Zhonghuai,Zhang,Liangchi,Yang,Shengyao,等. Effects of temperature on the deformation of 6H–SiC during nanoscratching[J]. Wear,2023,523.
APA
Wu,Zhonghuai,Zhang,Liangchi,Yang,Shengyao,Wu,Chuhan,Xu,Kemi,&Zheng,Dezhi.(2023).Effects of temperature on the deformation of 6H–SiC during nanoscratching.Wear,523.
MLA
Wu,Zhonghuai,et al."Effects of temperature on the deformation of 6H–SiC during nanoscratching".Wear 523(2023).
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