Fully Transparent Ultraviolet Photodetector with Ultrahigh Responsivity Enhanced by MXene-Induced Photogating Effect

Ma，Hailong1; Fang，Huajing1; Liu，Yanyu2,3; Li，Jiaqi1; Jing，Kai1; Hong，Jiawang2; Wang，Hong4

2023

10.1002/adom.202300393

Advanced Optical Materials   Impact Factor & Quartile

2195-1071

Transparent photodetectors with the optical signal recognition and conversion capabilities are the core component for smart sensors and next-generation “see-through” optoelectronics. However, it is usually difficult to have both excellent optical transmittance and photoresponse performance, which hinders the practicality of transparent photodetectors. Herein, a photogating effect enhanced transparent ultraviolet (UV) photodetector is demonstrated based on the TiO/MXene van der Waals heterojunction. By simply spin-coating MXene nanosheets on TiO film, the UV photodetector exhibits significantly enhanced performance, such as ultrahigh responsivity (202.4 A/W), large specific detectivity (1.79 × 10 Jones) and outstanding external quantum efficiency (1.02 × 10%), which are three orders of magnitude higher than those of pure TiO film. Meanwhile, the device exhibits up to 95% transparency in the visible range. Both the experimental results and theory calculations indicate that local Schottky junctions are established at the TiO/MXene interface. These local junctions exert a giant photogating effect under illumination, which can facilitate the separation of photogenerated carriers and improve the photodetection performance. Moreover, the transparent photodetector has been successfully applied in a UV index wireless sensing system. This work demonstrates the ingenious application of MXene in optoelectronics and provides insight into the design of high-performance transparent photodetectors.

MXene nanosheets photogating effect transparent electronics ultraviolet photodetectors van der Waals heterojunction

English

Corresponding

2-s2.0-85151624552

Scopus

1.State Key Laboratory for Mechanical Behavior of Materials,School of Material Science and Engineering,Xi'an Jiaotong University,Xi'an,710049,China
2.School of Aerospace Engineering,Beijing Institute of Technology,Beijing,100081,China
3.College of Physics and Materials Science,Tianjin Normal University,Tianjin,300387,China
4.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Ma，Hailong,Fang，Huajing,Liu，Yanyu,et al. Fully Transparent Ultraviolet Photodetector with Ultrahigh Responsivity Enhanced by MXene-Induced Photogating Effect[J]. Advanced Optical Materials,2023.

Ma，Hailong.,Fang，Huajing.,Liu，Yanyu.,Li，Jiaqi.,Jing，Kai.,...&Wang，Hong.(2023).Fully Transparent Ultraviolet Photodetector with Ultrahigh Responsivity Enhanced by MXene-Induced Photogating Effect.Advanced Optical Materials.

Ma，Hailong,et al."Fully Transparent Ultraviolet Photodetector with Ultrahigh Responsivity Enhanced by MXene-Induced Photogating Effect".Advanced Optical Materials (2023).