Title | A 160-Gb/s 0.37-pJ/bit PAM4 Optical Receiver in 28-nm CMOS |
Author | |
DOI | |
Publication Years | 2022
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Conference Name | IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)
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ISBN | 978-1-6654-5080-5
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Source Title | |
Pages | 333-336
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Conference Date | 11-13 Nov. 2022
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Conference Place | Shenzhen, China
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Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA
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Publisher | |
Abstract | This paper presents a 160-Gb/s PAM4 optical receiver implemented in 28-nm CMOS process. The receiver consists of an equalized inverter-based transimpedance amplifier (TIA), a proposed 2-stage cascode-based single-to-differential converter (S2D), and a 2-stage variable gain amplifier (VGA). Inductive peaking techniques are adopted in equalized TIA and S2D for broadening bandwidth. Consuming 58.79-mW power, the proposed receiver achieves a differential conversion gain of 76.1 dB Omega with 0.2-dB and 3.2 degrees imbalances in amplitude and phase, respectively. |
Keywords | |
SUSTech Authorship | First
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Language | English
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URL | [Source Record] |
Indexed By | |
Funding Project | NSFC["JCYJ20190809142017428","JCYJ20200109141225025"]
; NSFGP[62074074]
; null[2021A1515011266]
; null[K21799121]
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WOS Research Area | Computer Science
; Engineering
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WOS Subject | Computer Science, Hardware & Architecture
; Engineering, Electrical & Electronic
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WOS Accession No | WOS:000987045300069
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Data Source | IEEE
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PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10090288 |
Citation statistics |
Cited Times [WOS]:0
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Document Type | Conference paper |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/527454 |
Department | SUSTech Institute of Microelectronics |
Affiliation | School of Microelectronics, Southern University of Science and Technology, Shenzhen, China |
First Author Affilication | SUSTech Institute of Microelectronics |
First Author's First Affilication | SUSTech Institute of Microelectronics |
Recommended Citation GB/T 7714 |
Leiming Wang,Xiongshi Luo,Dongfan Xu,et al. A 160-Gb/s 0.37-pJ/bit PAM4 Optical Receiver in 28-nm CMOS[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2022:333-336.
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