Title | A 33-37GHz Two-Path Power Amplifier with>18-dB Gain and 26.7-dBm Psat in 150nm GaAs Process |
Author | |
DOI | |
Publication Years | 2022
|
ISSN | 2159-2144
|
ISBN | 978-1-6654-5070-6
|
Source Title | |
Pages | 64-67
|
Conference Date | 11-13 Nov. 2022
|
Conference Place | Shenzhen, China
|
Keywords | |
SUSTech Authorship | Others
|
URL | [Source Record] |
Data Source | IEEE
|
PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10104000 |
Citation statistics |
Cited Times [WOS]:0
|
Document Type | Conference paper |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/531310 |
Department | SUSTech Institute of Microelectronics |
Affiliation | 1.State Key Laboratory of ASIC and System, School of Microelectronics Fudan University, Shanghai, China 2.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 3.State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST, University of Macau, Macao, China |
Recommended Citation GB/T 7714 |
Zhonghao Sun,Zhili Liu,Tianxiang Wu,et al. A 33-37GHz Two-Path Power Amplifier with>18-dB Gain and 26.7-dBm Psat in 150nm GaAs Process[C],2022:64-67.
|
Files in This Item: | There are no files associated with this item. |
|
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment