南方科技大学知识苑(SUSTech KC): 一种宽禁带半导体器件及其制备方法、探测器和调制器

Title	一种宽禁带半导体器件及其制备方法、探测器和调制器
Alternative Title	Wide bandgap semiconductor device and preparation method thereof, detector and modulator
Author	项晓东; 顾川川; 张鹏
First Inventor	项晓东
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518055 广东省深圳市南山区西丽学苑大道1088号
Current applicant	南方科技大学
Address of Current applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
First Current Applicant	南方科技大学
Address of First Current Applicant	518055 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
Application Number	CN202011553364.4
Application Date	2020-12-24
Open (Notice) Number	CN112688160A
Date Available	2021-04-20
Status of Patent	实质审查
Legal Date	2021-05-07
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明实施例公开了一种宽禁带半导体器件及其制备方法、探测器和调制器，宽禁带半导体器件包括：泵浦光源和宽禁带半导体结构；泵浦光源用于出射泵浦光束；宽禁带半导体结构位于泵浦光束的传播路径上，用于接收泵浦光束并基于泵浦光束产生光生载流子；其中，泵浦光束的光子能量大于或者等于宽禁带半导体结构的能隙。本发明解决了现有技术中采用掺杂方式无法制备某些类型的宽禁带半导体以及由于掺杂导致宽禁带半导体材料缺陷降低应用性能的技术问题。
Other Abstract	The embodiment of the invention discloses a wide bandgap semiconductor device, a preparation method thereof, a detector and a modulator. The wide bandgap semiconductor device comprises a pump light source and a wide bandgap semiconductor structure; the pump light source is used for emitting a pump light beam; the wide bandgap semiconductor structure is located on a propagation path of the pump light beam and is used for receiving the pump light beam and generating a photon-generated carrier based on the pump light beam, the photon energy of the pump beam is greater than or equal to the energy gap of the wide bandgap semiconductor structure. The technical problems that in the prior art, certain types of wide bandgap semiconductors cannot be prepared in a doping mode, and the application performance is reduced due to the defects of wide bandgap semiconductor materials caused by doping are solved.
IPC Classification Number	H01S5/026 ; H01S5/04 ; H01S5/06
INPADOC Legal Status	（ENTRY INTO FORCE OF REQUEST FOR SUBSTANTIVE EXAMINATION）[2021-05-07][CN]
INPADOC Patent Family Count	1
Extended Patent Family Count	1
Priority date	2020-12-24
Patent Agent	潘登
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/531467
Department	Department of Materials Science and Engineering 前沿与交叉科学研究院
Recommended Citation GB/T 7714	项晓东,顾川川,张鹏. 一种宽禁带半导体器件及其制备方法、探测器和调制器.

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