南方科技大学知识苑(SUSTech KC): 一种半导体器件电极的制作方法及半导体欧姆接触结构

Title	一种半导体器件电极的制作方法及半导体欧姆接触结构
Alternative Title	Manufacturing method of semiconductor device electrode and semiconductor ohmic contact structure
Author	于洪宇; 蒋玉龙; 范梦雅
First Inventor	于洪宇
Original applicant	南方科技大学
First applicant	南方科技大学
Address of First applicant	518000 广东省深圳市南山区西丽学苑大道1088号
Current applicant	珠海镓未来科技有限公司
Address of Current applicant	519000 广东省珠海市横琴新区环岛东路3000号横琴国际商务中心901-9024室
First Current Applicant	珠海镓未来科技有限公司
Address of First Current Applicant	519000 广东省珠海市横琴新区环岛东路3000号横琴国际商务中心901-9024室
Application Number	CN202010207017.X
Application Date	2020-03-23
Open (Notice) Number	CN111403281A
Date Available	2020-07-10
Status of Patent	驳回 ; 权利转移
Legal Date	2023-02-28
Subtype	发明申请
SUSTech Authorship	First
Abstract	本发明实施例公开了一种半导体器件电极的制作方法及半导体欧姆接触结构。该半导体器件电极的制作方法包括：在AlGaN(InAlN)/GaN外延片上形成光刻胶图案，图案定义出源漏极欧姆电极图案；通过在外延片具有光刻胶图案的一侧依次形成TaxAly合金金属层和Au金属层；其中，x＞0且y≥0；去除光刻胶以及光刻胶上的合金与金属，形成源漏极欧姆电极图案；对形成有源漏极欧姆电极图案的外延片进行热退火工艺处理；本发明实施例的技术方案，解决了在达到低欧姆接触电阻值的情况下，无法同时兼顾欧姆电极的表面形貌以及边缘敏锐度的问题，实现了在降低欧姆接触阻值的大小时，兼顾改善欧姆电极的表面粗糙程度及边缘敏锐度，从而提高GaN半导体器件的输出特性、热稳定性和器件良率，进而更加适用于短沟道射频器件。
Other Abstract	The embodiment of the invention discloses a manufacturing method of a semiconductor device electrode and a semiconductor ohmic contact structure. The manufacturing method of the semiconductor device electrode comprises the following steps: forming a photoresist pattern on an AlGaN (InAlN)/GaN epitaxial wafer, wherein the pattern defines a source-drain ohmic electrode pattern; forming a TaxAly alloy metal layer and an Au metal layer sequentially on the side, provided with the photoresist pattern, of the epitaxial wafer, wherein x>0 and y>=0; removing the photoresist and the alloy and metal on the photoresist to form the source-drain ohmic electrode pattern; and performing thermal annealing process treatment on the epitaxial wafer on which the source-drain ohmic electrode pattern is formed.According to the technical scheme, the problem that, under the condition that a low ohmic contact resistance value is reached, the surface appearance and the edge sensitivity of the ohmic electrode cannot be considered at the same time is solved, and the surface roughness and the edge sensitivity of the ohmic electrode are improved when the ohmic contact resistance is reduced, so that the output characteristic, the thermal stability and the device yield of the GaN semiconductor device are improved, and the method is more suitable for a short-channel radio frequency device.
CPC Classification Number	H01L29/41725 ; H01L29/66462 ; H01L29/7783
IPC Classification Number	H01L21/335 ; H01L29/778 ; H01L29/417
INPADOC Legal Status	（-REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION）[2023-02-28][CN]
INPADOC Patent Family Count	2
Extended Patent Family Count	2
Priority date	2020-03-23
Patent Agent	孟金喆 ; 潘登
Agency	北京品源专利代理有限公司
URL	[Source Record]
Data Source	PatSnap
Document Type	Patent
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/531595
Department	SUSTech Institute of Microelectronics
Recommended Citation GB/T 7714	于洪宇,蒋玉龙,范梦雅. 一种半导体器件电极的制作方法及半导体欧姆接触结构.

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