| Title | 一种AlGaN/GaN欧姆接触电极及其制备方法和用途 |
| Alternative Title | AlGaN/GaN ohmic contact electrode and preparation method and application thereof
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| Author | |
| First Inventor | 于洪宇
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| Original applicant | 南方科技大学
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| First applicant | 南方科技大学
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| Address of First applicant | 518000 广东省深圳市南山区西丽学苑大道1088号
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| Current applicant | 南方科技大学
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| Address of Current applicant | 518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
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| First Current Applicant | 南方科技大学
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| Address of First Current Applicant | 518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)
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| Application Number | CN201911100606.1
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| Application Date | 2019-11-12
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| Open (Notice) Number | CN110797397A
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| Date Available | 2020-02-14
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| Status of Patent | 驳回
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| Legal Date | 2022-10-18
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| Subtype | 发明申请
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| SUSTech Authorship | First
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| Abstract | 本发明涉及一种AlGaN/GaN欧姆接触电极及其制备方法和用途，所述电极由下而上依次包括AlGaN/GaN基底、帽层金属层和TixAly合金层，其中，x＞0，y＞0。所述方法采用光刻技术在AlGaN层上定义漏极和/或源极图形，然后在AlGaN表面依次沉积TixAly合金和帽层金属层，去除光刻胶，进行剥离处理，再对剥离后的样品进行热处理，得到所述的AlGaN/GaN欧姆接触电极。本发明同时还提供一种降低AlGaN/GaN基底与电极之间欧姆接触的方法，通过AlGaN/GaN基底表面沉积TixAly合金层作为电极而实现。本发明提供的欧姆接触电极，达到射频器件的制备标准，同时提高器件的稳定性和可靠性。 |
| Other Abstract | The invention relates to an AlGaN/GaN ohmic contact electrode and a preparation method and application thereof. The AlGaN/GaN ohmic contact electrode sequentially comprises an AlGaN/GaN substrate, a cap-layer metal layer and a TixAly alloy layer from bottom to top, wherein x is greater than 0, and y is greater than 0. The preparation method comprises the following steps: defining drain and/or source patterns on an AlGaN layer by using a photoetching technology; sequentially depositing the TixAly alloy and the cap-layer metal layer on the surface of the AlGaN layer; removing a photoresist; performing stripping treatment; and performing heat treatment on a stripped sample to obtain the AlGaN/GaN ohmic contact electrode. The invention further provides a method for reducing ohmic contact between the AlGaN/GaN substrate and an electrode. The method is realized by depositing the TixAly alloy layer on the surface of the AlGaN/GaN substrate for functioning as the electrode. The ohmic contact electrode provided by the invention reaches the preparation standard of a radio frequency device; and meanwhile, the stability and the reliability of the device are improved. |
| CPC Classification Number | H01L29/40
; H01L29/401
; H01L29/45
; H01L29/452
; H01L29/778
|
| IPC Classification Number | H01L29/40
; H01L29/45
; H01L29/778
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| INPADOC Legal Status | （-REJECTION OF INVENTION PATENT APPLICATION AFTER PUBLICATION）[2022-10-18][CN]
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| INPADOC Patent Family Count | 2
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| Extended Patent Family Count | 2
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| Priority date | 2019-11-12
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| Patent Agent | 巩克栋
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| Agency | 北京品源专利代理有限公司
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| URL | [Source Record] |
| Data Source | PatSnap
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| Document Type | Patent |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/531621 |
| Department | SUSTech Institute of Microelectronics |
| Recommended Citation GB/T 7714 |
于洪宇,蒋玉龙,范梦雅. 一种AlGaN/GaN欧姆接触电极及其制备方法和用途.
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